Design and fabrication of high-performance diamond triple-gate field-effect transistors

Liu, Jiangwei; Ohsato, Hirotaka; Wang, Xi; Liao, Meiyong; Koide, Yasuo

doi:10.1038/srep34757

Cited by 40 publications

(21 citation statements)

References 36 publications

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“…However, the output current is not sufficiently high. In addition, different device structures, such as [17] gate or the device eliminating source/draingate interspaces [12] have been investigated to improve the device performance. As reported by J. Liu et al [12], after eliminating the source/drain-gate interspaces, the device achieved lower on-resistance (R on ), higher output current, and higher transconductance (g m ) than other devices with the same gate length (L G ).…”

Section: Introductionmentioning

confidence: 99%

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

Ren

et al. 2020

IEEE Access

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C-H diamond metal-oxide-semiconductor field effect transistors with different structures were fabricated on the same polycrystalline diamond plate. Devices A and B with 25-nm-thick high temperature (300 • C) atomic layer deposition grown Al 2 O 3 dielectric have the same source-to-drain distance of 6 µm and different gate length of 2 µm and 6 µm, respectively. Both devices show ultra-high on/off ratio of over 10 10 and ultra-low gate leakage of below 10 −10 A and continuous measurement stability. Device B with the source/drain-channel interspaces eliminated has achieved an on resistance of 46.20 •mm, which is record low in the reported 6-µm H-diamond MOSFETs with the gate dielectric prepared at high temperature (≥ 300 • C). Meanwhile, device B shows larger drain current in a large portion of the linear region at V GS = −6 V, and a just slightly smaller I Dmax compared with device A though its L G is three times of that of device A. A simple model of I D was used to explain the physics behind this phenomenon. In addition, the breakdown voltage is 145 V for device A and 27 V for device B, corresponding to the average breakdown field of about 0.72 MV/cm and 10.8 MV/cm, respectively.

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Section: Introductionmentioning

confidence: 99%

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

Ren

et al. 2020

IEEE Access

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“…The H-diamond MOS capacitors with low leakage current and trapped charge densities were fabricated [ 28 , 29 , 30 , 31 , 32 , 33 , 34 ]. By improving the device structures, T-type and triple-gate fin-type H-diamond MOSFETs were fabricated successfully with current outputs more than 200 mA·mm −1 [ 32 , 33 , 34 ]. The NO 2 -treated H-diamond channel layer based MOSFETs could operate well with a current output as high as 1.35 A·mm −1 [ 35 ].…”

Section: Introductionmentioning

confidence: 99%

An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors

Liu

Koide

2018

Sensors

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Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high-k oxides on hydrogenated-diamond (H-diamond) for metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. High-k oxide insulators are deposited using atomic layer deposition (ALD) and sputtering deposition (SD) techniques. Electrical properties of the H-diamond MOS capacitors with high-k oxides of ALD-Al2O3, ALD-HfO2, ALD-HfO2/ALD-Al2O3 multilayer, SD-HfO2/ALD-HfO2 bilayer, SD-TiO2/ALD-Al2O3 bilayer, and ALD-TiO2/ALD-Al2O3 bilayer are discussed. Analyses for capacitance-voltage characteristics of them show that there are low fixed and trapped charge densities for the ALD-Al2O3/H-diamond and SD-HfO2/ALD-HfO2/H-diamond MOS capacitors. The k value of 27.2 for the ALD-TiO2/ALD-Al2O3 bilayer is larger than those of the other oxide insulators. Drain-source current versus voltage curves show distinct pitch-off and p-type channel characteristics for the ALD-Al2O3/H-diamond, SD-HfO2/ALD-HfO2/H-diamond, and ALD-TiO2/ALD-Al2O3/H-diamond MOSFETs. Understanding of fabrication routines and electrical properties for the high-k oxide/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOSFET gas sensors.

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“…Because of the high trench coverage of the ALD process, ALD-Al 2 O 3 is used for gate insulation and passivation layers for 2DHG diamond MOSFETs in 3D structures. Diamond lateral and vertical-type 2DHG diamond MOSFETs with trench structures 17 and triple-gate field-effect transistors 18 were fabricated using inductively coupled plasma reactive ion etching (ICP-RIE) to form their trench structures and fin patterns, respectively, and both devices have 3D channel regions. In this work, we fabricate vertical-type 2DHG diamond MOSFETs with trench structures on highly boron-doped (p + ) single crystal diamond substrates and obtain device operation equivalent to that of devices with lateral structures with the same gate-drain distance.…”

Section: Introductionmentioning

confidence: 99%

Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

Inaba

Okubo

et al. 2018

Sci Rep

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Power semiconductor devices require low on-resistivity and high breakdown voltages simultaneously. Vertical-type metal-oxide-semiconductor field-effect transistors (MOSFETs) meet these requirements, but have been incompleteness in diamond. Here we show vertical-type p-channel diamond MOSFETs with trench structures and drain current densities equivalent to those of n-channel wide bandgap devices for complementary inverters. We use two-dimensional hole gases induced by atomic layer deposited Al2O3 for the channel and drift layers, irrespective of their crystal orientations. The source and gate are on the planar surface, the drift layer is mainly on the sidewall and the drain is the p+ substrate. The maximum drain current density exceeds 200 mA mm−1 at a 12 µm source-drain distance. On/off ratios of over eight orders of magnitude are demonstrated and the drain current reaches the lower measurement limit in the off-state at room temperature using a nitrogen-doped n-type blocking layer formed using ion implantation and epitaxial growth.

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Design and fabrication of high-performance diamond triple-gate field-effect transistors

Cited by 40 publications

References 36 publications

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors

Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

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Design and fabrication of high-performance diamond triple-gate field-effect transistors

Cited by 40 publications

References 36 publications

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3Gate Dielectric

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3Gate Dielectric

An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors

Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

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Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric