In this paper, a InP/ZnSe/ZnS quantum dots photoresist (QDPR) film has
been successfully prepared after the as-synthesized InP/ZnSe/ZnS
quantum dots (QDs) were mixed with the photoresist, where the molar
ratio of P3- : In3+: Se2- was
6:1:3 and the reaction time the ZnS shell was 60 min. The influence of
the thickness of the film and the mass ratio of InP/ZnS QDs to
photoresist on the photoluminescence quantum yield (PLQY) was
investigated. The results show that the PLQY changes from 39.9%
to 52.6% and the CIE color coordinates could vary from (0.28,
0. 10) to (0.65, 0.32) with the assistance of 5.5 pairs of DBR
structures when the thickness of the InP/ZnSe/ZnS QDPR films is 7.82
µm and the mass ratio (wt%) of the InP/ZnSe/ZnS QDs to
the photoresist is 25%. Compared with the InP/ZnSe/ZnS QDs
film, the PLQY of the patterned InP/ZnSe/ZnS QDs layer can reach to be
47.2% and the CIE color coordinates of is varied from (0.28,
0.10) to (0.35, 0.14). Furthermore, the PLQY of the patterned
InP/ZnSe/ZnS QDs layer can be improved to 65.1% at 5.5 pairs of
DBR structures. Based on these results, the InP/ZnSe/ZnS QDs films,
especially patterned QD layer, show great potential for the
fabrication of high-quality QD color filter and full-color
displays.