Design and fabrication of 1.31-1.55-μm phased-array duplexer on InP

Mestric, R.; Renaud, M.; Bachmann, M.; Martin, Bruno; Gaborit, F.

doi:10.1109/2944.577372

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Cited by 4 publications

(2 citation statements)

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“…2. The semiconductor wafer consisted of a 0.3 µm thick In 0.85 Ga 0.15 As 0.33 P 0.67 layer sandwiched between two 1.56 µm cladding layers of InP (Mestric et al 1996). The layers were grown on an InP substrate by metal-organic chemical vapor deposition (MOCVD).…”

Section: Waveguide Designmentioning

confidence: 99%

“…AWGs on InP are highly desirable because of their potential for monolithic integration with active devices such as lasers and amplifiers (Zirngibl et al 1992;Joyner et al 1994). The first broadband AWG on InP was designed for the duplexing of 1.31 µm and 1.55 µm wavelengths (Mestric et al 1996); however, the channel spacing is not suitable for CWDM operation.…”

Section: Introductionmentioning

confidence: 99%

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Broadband arrayed waveguide gratings on InP

et al. 2007

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Broadband arrayed waveguide gratings on InP are presented using a novel S-shape design. This design was utilized to accommodate the large free spectral range required for broadband operation. Four and eight channel AWGs with a wavelength channel spacing of 18 nm are discussed. The output peaks of the AWGs have a wide FWHM of 11 nm which provides insensitive operation to polarization, temperature fluctuations, and chromatic dispersion.

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Section: Waveguide Designmentioning

confidence: 99%