Design and epitaxy of 15 μm InGaAsP-InP MQW material for a transistor laser

Abstract

An InGaAsP-InP transistor laser (TL) at 1.55 microm has been designed and modeled. The proposed TL has a deep-ridge waveguide structure with the multiple quantum wells (MQWs) buried in the base-emitter junction, which provides good optical and electrical confinement and can effectively reduce the optical absorption and lateral leakage current. Good laser performance has been predicted by numerical modeling based on which the epitaxial growth was carried out by metalorganic chemical vapor deposition (MOCVD). The effect of p-dopant (Zn) diffusion on the QW performance was investigated by a re-growth procedure. By introducing a graded p-doping profile, the Zn diffusion into the MQWs was effectively controlled. With an average doping density of 1 x 10(18) cm(-3) in the base contact layer, the InGaAsP MQWs demonstrated high PL intensity at 1.51 microm and clear satellite diffraction peaks in the XRD spectrum.

Effects of Quantum-Well Base Geometry on Optoelectronic Characteristics of Transistor Laser

“…Effects of Quantum-Well Base Geometry on Optoelectronic Characteristics of Transistor Laser 273 for diode laser (Duan et al, 2010), as one of the transistor laser parents, demonstrate considerable enhancement in optical bandwidth and gain of the device when increasing the number of quantum wells (Nagarajan et al, 1992), (Bahrami and Kaatuzian, 2010). Like the well location modelled here in this chapter, there may be an optimum number of quantum wells to be incorporated within the base region.…”

“…In addition, the TL has been simulated both numerically (Shi et al, 2008) (Kaatuzian & Taghavi, 2009) and by CAD, i.e. software packages, (Shi et al, 2008) (Duan et al, 2010). The electron recombination plays an important role in determining the base current due to spontaneous and stimulated emission in the QW, so that the electronic characteristics of the www.intechopen.com…”

Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites

“…Moreover, InGaAs/InP transistor performance benefits from Zn doping [42,43]. Zn-based shell materials for InP NW heterostructures, however, are far less explored, and their combination with oxidic Zn-coatings has not been reported to the best of our knowledge.…”

One-dimensional numerical analysis of transistor lasers

“…Compared with conventional laser diodes (LDs), the main advantages of the TLs are as follows: simultaneously outputting an optical signal and an electrical signal with a single input electrical signal; being either voltage-modulated or current-modulated; being three-terminal operation that enables novel applications; having an enhanced modulation bandwidth Shi et al 2008;Duan et al 2010;Taghavi and Kaatuzian 2010). Especially, its great potential for high frequency operation may break the bandwidth bottleneck of LDs.…”