Design and Development of Substrate Integrated Waveguide Based Filtenna for X Band Application

Vimala, G.S. Annie Grace; Prakash, Ved; Akilandeswari, A.; Sungeetha, D.; Saravanan, M.

doi:10.13052/2022.aces.j.370307

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…An X-band filtenna has been designed on a low-profile 1.6 mm thick RT duroid 5880 substrate using SIW to taper MS line transition. The designed filtenna has a gain of 7.46 dBi in the X-band (Vimala et al , 2022). A back-to-back (B2B) SIW transition has been fabricated for the tested impedance bandwidth of 26.5 GHz.…”

Section: Introductionmentioning

confidence: 99%

Aerodynamic slotted SIW-to-MS line transition using mitered end taper for satellite and RADAR communications

Varshney

Sharma

2023

WJE

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Purpose This paper aims to present the design development and measurement of two aerodynamic slotted X-bands back-to-back planer substrate-integrated rectangular waveguide (SIRWG/SIW) to Microstrip (MS) line transition for satellite and RADAR applications. It facilitates the realization of nonplanar (waveguide-based) circuits into planar form for easy integration with other planar (microstrip) devices, circuits and systems. This paper describes the design of a SIW to microstrip transition. The transition is broadband covering the frequency range of 8–12 GHz. The design and interconnection of microwave components like filters, power dividers, resonators, satellite dishes, sensors, transmitters and transponders are further aided by these transitions. A common planar interconnect is designed with better reflection coefficient/return loss (RL) (S11/S22 ≤ 10 dB), transmission coefficient/insertion loss (IL) (S12/S21: 0–3.0 dB) and ultra-wideband bandwidth on low profile FR-4 substrate for X-band and Ku-band functioning to interconnect modern era MIC/MMIC circuits, components and devices. Design/methodology/approach Two series of metal via (6 via/row) have been used so that all surface current and electric field vectors are confined within the metallic via-wall in SIW length. Introduced aerodynamic slots in tapered portions achieve excellent impedance matching and tapered junctions with SIW are mitered for fine tuning to achieve minimum reflections and improved transmissions at X-band center frequency. Findings Using this method, the measured IL and RLs are found in concord with simulated results in full X-band (8.22–12.4 GHz). RLC T-equivalent and p-equivalent electrical circuits of the proposed design are presented at the end. Practical implications The measurement of the prototype has been carried out by an available low-cost X-band microwave bench and with a Keysight E4416A power meter in the microwave laboratory. Originality/value The transition is fabricated on FR-4 substrate with compact size 14 mm × 21.35 mm × 1.6 mm and hence economical with IL lie within limits 0.6–1 dB and RL is lower than −10 dB in bandwidth 7.05–17.10 GHz. Because of such outstanding fractional bandwidth (FBW: 100.5%), the transition could also be useful for Ku-band with IL close to 1.6 dB.

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Section: Introductionmentioning

confidence: 99%