Design and Characterization of (Yb, Al, Cu, Au)/GeO2/C As MOS Field Effect Transistors, Negative Capacitance Effect Devices and Band Pass/Reject Filters Suitable for 4G Technologies

Qasrawi, A.F.; Daragme, Rana B.

doi:10.1007/s11664-022-09514-w

Cited by 5 publications

(6 citation statements)

References 36 publications

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“…Platinum contacts also show high surface energy but the experimentally measured rectification ratio is low probably due to the lower built in potential compared to the other tested metal contacts. It is also observable from table 2 that the contact asymmetry for Ag/SM/Au is very low and as can be seen from figure 3(b) the ratio is almost 1.0 indicating low rectification ratio or probably tunneling type of diodes [23]. Reasons other than the surface energy which could account for the biasing dependent rectification ratios and the low rectification ratio of Ag/SM/Au and Ag/SM/Pt structures could be the surface roughness [23] and the orbital overlapping [24,25].…”

Section: Resultsmentioning

confidence: 68%

“…It is also observable from table 2 that the contact asymmetry for Ag/SM/Au is very low and as can be seen from figure 3(b) the ratio is almost 1.0 indicating low rectification ratio or probably tunneling type of diodes [23]. Reasons other than the surface energy which could account for the biasing dependent rectification ratios and the low rectification ratio of Ag/SM/Au and Ag/SM/Pt structures could be the surface roughness [23] and the orbital overlapping [24,25]. On the other hand as the electronic configuration of Ag, C, Au and Pt are d s 4 5 , respectively.…”

Section: Resultsmentioning

confidence: 68%

“…Lattice mismatches leads to defective structures. Hence metal contact atoms which can occupy vacant sites of Mg or interact with Se to complete broken bond lead to enhanced crystallinity with lower defect densities and more efficient current transport [23][24][25][26].…”

Section: Resultsmentioning

confidence: 99%

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Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR and 6G technologies

2022

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Herein the fabrication and practical applications of p-MgSe thin films as active p-layer of electronic devices are reported. MgSe films are prepared by a vacuum evaporation technique onto n-Si substrates under a vacuum pressure of 10-5 mbar. The films are morphologically, structurally, electrically and opto-electronically investigated. Having identified the work function of p-MgSe as 6.74 eV, the role of Ag, C, Au and Pt metal contacts on the performance of the n-Si/p-MgSe (SM) diodes are studied. It is observed that high rectification ratios of ~104 and 102 are achieved at an applied voltage of 3.0 V for the Ag/SM/C and Ag/SM/Ag diode structures, respectively. In addition, a current responsivity to visible and infrared light of ~0.70 A/W is observed for the Ag/SM/Ag channels. The noise equivalent ratios, the external quantum efficiency and the detectivity of the Ag/SM/Ag diodes suit requirements of visible light and infrared communication detectors. Moreover, studies of the capacitance-voltage characteristics showed capacitor characteristics. The depleting of the Ag/SM/Ag capacitors is possible up to 50 MHz. Furthermore, analyzing the capacitance, resistance and cutoff frequency spectra have shown that the Ag/SM/Ag device channels can perform as negative resistance sources with cutoff frequency values that suits 6G technology requirements

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Section: Resultsmentioning

confidence: 68%

Section: Resultsmentioning

confidence: 68%

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Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR and 6G technologies

2022

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“…The impedance (Z ) values of a parallel RLC circuit connection is then determined from the relations [30], On the other hand the capacitance slowly decreases exhibiting negative values in the spectral range of 0.18-1.04 GHz. Negative capacitance effect is a novel effect useful for parasitic capacitance cancellations, signal amplification and noise reduction [31,32]. It originates from the surface charge distribution or from minoritycarrier injection caused by accumulation of minority carriers at the ITO/MgSe interface or Au/MgSe interfaces [31,32].…”

Section: Resultsmentioning

confidence: 99%

ITO/MgSe interfaces designed as gigahertz/terahertz filters

Almotiri

Qasrawi

2023

Phys. Scr.

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Herein a new class of MgSe gigahertz/terahertz band filters operatives in the frequency domain of 1.0 GHz-1.86 THz is fabricated and experimentally tested. MgSe band filters are coated onto glass and indium tin oxide (ITO) substrates by the thermal evaporation technique under a vacuum pressure of 10-5 mbar. Thin films of MgSe are structurally, morphologically, compositionally, optically and electrically characterized. It is observed that ITO substrates induce the growth of monophasic of MgSe, enhances the crystallinity of the films and blueshifts the energy band gaps of MgSe. Practical applications were verified by impedance spectroscopy technique through imposing an ac signal of driving frequency in the domain of 10.0 MHz-1.8 GHz between the terminals of ITO/MgSe/Au (IMA) devices. It is observed that the IMA devices exhibit negative capacitance effect. Analysis of the cutoff frequency spectra has shown that IMA devices can reveal wide range of tunability in the gigahertz frequency domain. In addition, the cutoff frequency spectra show values reaching ~1.86 THz for signals of driving frequencies of ~1.0 GHz. Evaluation of the magnitude of the reflection coefficient spectra and return loss spectra for these devices show that the IMA devices can perform as bandstop filters with return loss values exceeding 20 dB at 1.0 GHz. The features of the ITO/MgSe/Au devices are appropriate for the 5G/6G technology needs indicating that the device can be employed in communication technology and other gigahertz/terahertz applications.

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“…These types of germanium oxide were attractive materials such as both amorphous-form GeO x and crystalline-form GeO 2 owing to their optical and electrical properties. GeO 2 is used as a high-κ interlayer dielectric material and is useful in high-frequency applications because of its high carrier mobility. − In particular, GeO 2 can be used as a blocking layer with a reasonable band gap (5.81 eV) and a higher dielectric constant (κ ≈ 6) than SiO 2 (κ ≈ 3.9). , In addition, GeO 2 is commonly used in various applications such as electro-optical modulators, fiber optic materials, , nonlinear optics, , and piezoelectric glass materials and can be applied in batteries for rapid charging or discharging in lithium or sodium batteries. − GeO 2 nanoparticles can be used as memory devices or photocatalysts, and previous research has demonstrated the typical properties of the charge-storage effect of GeO 2 nanoparticles. − Amorphous GeO 2 is a good glass former and competitive with α-SiO 2 or amorphous boron oxide. , Furthermore, germanium is an attractive substitute for SiO 2 in metal-oxide-semiconductor field-effect transistors. − Germanium oxide-based electronic devices are of interest to researchers because of their broad range of applications. Additionally, hexagonal GeO 2 and amorphous GeO 2 possess water solubility, prompting research into their potential utilization in emerging applications such as secure elements and eco-friendly processes. ,, Consequently, the development of germanium oxides with tuned defects, vacancies, and high stoichiometries is necessary to increase their potential for various applications.…”

Section: Introductionmentioning

confidence: 99%

New Heteroleptic Germanium Precursors for GeO₂ Thin Films by Atomic Layer Deposition

Choi,

Park,

Lee

et al. 2023

ACS Omega

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This study describes the synthesis of 12 new germanium complexes containing β-diketonate and/or N-alkoxy carboxamidate-type ligands as precursors for GeO 2 through atomic layer deposition (ALD). A series of Ge(β-diketonate)Cl complexes such as Ge(acac)Cl (1) and Ge(tmhd)Cl (2) were synthesized by using acetylacetone (acacH) and 2,2,6,6-tetramethyl-3,5-heptanedione (tmhdH). N-Alkoxy carboxamidate-type ligands such as N-methoxypropanamide (mpaH), N-methoxy-2,2dimethylpropanamide (mdpaH), N-ethoxy-2-methylpropanamide (empaH), N-ethoxy-2,2-dimethylpropanamide (edpaH), and N-methoxybenzamide (mbaH) were used to afford further substituted complexes Ge(acac)(mpa) (3), Ge(acac)(mdpa) (4), Ge(acac)(empa) (5), Ge(acac)(edpa) (6), Ge(acac)(mba) (7), Ge(tmhd)(mpa) (8), Ge(tmhd)(mdpa) (9), Ge(tmhd)(empa) (10), Ge(tmhd)(edpa) (11), and Ge(tmhd)-(mba) (12), respectively. Thermogravimetric analysis curves, which mostly exhibited single-step weight losses, were used to determine the evaporation properties of complexes 1−12. Interestingly, liquid complex 2 has no residue at 198 °C and therefore exhibits excellent vaporization properties and high volatility. Single-crystal X-ray diffraction studies of 1 and 7 demonstrated that the complexes had monomeric molecular structures with germanium chelated by the oxygen atoms of one or two bidentate ligands, respectively. An ALD process was developed for the growth of GeO 2 using Ge(tmhd)Cl (2) as a new precursor and H 2 O 2 as an oxidant. This study demonstrates the achievement of self-limiting growth of GeO 2 films by varying the duration of injection/purge, with an observed ALD window at deposition temperatures ranging from 300 to 350 °C. The saturated growth per cycle of the GeO 2 film was determined as 0.27 Å/ cycle at a deposition temperature of 300 °C. The deposited films were observed to be amorphous consisting of GeO 2 .

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Design and Characterization of (Yb, Al, Cu, Au)/GeO2/C As MOS Field Effect Transistors, Negative Capacitance Effect Devices and Band Pass/Reject Filters Suitable for 4G Technologies

Cited by 5 publications

References 36 publications

Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR and 6G technologies

Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR and 6G technologies

ITO/MgSe interfaces designed as gigahertz/terahertz filters

New Heteroleptic Germanium Precursors for GeO₂ Thin Films by Atomic Layer Deposition

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Design and Characterization of (Yb, Al, Cu, Au)/GeO2/C As MOS Field Effect Transistors, Negative Capacitance Effect Devices and Band Pass/Reject Filters Suitable for 4G Technologies

Cited by 5 publications

References 36 publications

Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR and 6G technologies

Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR and 6G technologies

ITO/MgSe interfaces designed as gigahertz/terahertz filters

New Heteroleptic Germanium Precursors for GeO2 Thin Films by Atomic Layer Deposition

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Product

Resources

About

New Heteroleptic Germanium Precursors for GeO₂ Thin Films by Atomic Layer Deposition