Design and Characterization of an Integrated Passive Balun for Quad Band GSM Applications

Mondal, J.; Li, Li; Drye, J.

doi:10.1109/ectc.2006.1645700

Cited by 3 publications

(1 citation statement)

References 3 publications

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“…Highly repeatable RCL components with tight tolerance may be made in these processes using silicon, GaAs, glass, or other substrates [2][3][4][5][6]…”

Section: Introductionmentioning

confidence: 99%

Mobile Device Passive Integration from Wafer Process

Li¹,

Lee²,

Kim³

et al. 2011

International Symposium on Microelectronics

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In this paper, we present some passive components made from silicon substrate technology (Integrated Passive Device process) and integration schemes using these components for RF applications. RF decoupling capacitors from this process are characterized on ESR and ESL performance. Functional blocks (filters, baluns, diplexers, matching, etc) made from the IPD process, have shown good electrical performance with small form-factor features. The thin profiles from the IPDs make them very suitable to be used inside laminate and QFN packages. System-in-Packages or multiple-chip-modules using IPD approaches may have significant size reduction. The low profiles and the small form-factors of the IPDs result in less cross-talk between the IPDs and their nearby components (chips, SMDs, and routing traces, etc), and therefore it is easier to maintain signal integrity for packages.

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“…Highly repeatable RCL components with tight tolerance may be made in these processes using silicon, GaAs, glass, or other substrates [2][3][4][5][6]…”

Section: Introductionmentioning

confidence: 99%