Design and characterization of a 10 nm finfet

Yeap, Kim Ho; Lee, Jun Yi; Yeo, Wei Long; Nisar, Humaira; Loh, Siu Hong

doi:10.11113/mjfas.v15n4.1234

Cited by 3 publications

(2 citation statements)

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“…In most CMOS circuits, however, logic does not really switch at a constant frequency f switch . It is, therefore, more persuasive to express f switch in terms of the product of AF and the clock frequency f clk , that is, (11) Doing so, P switch in Eq. ( 10) becomes…”

Section: Switching Powermentioning

confidence: 99%

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Power Consumption in CMOS Circuits

Ng¹,

Yeap²,

Goh³

et al. 2023

Electromagnetic Field in Advancing Science and Technology

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In this chapter, we explain the two types of power consumption found in a complementary metal-oxide-semiconductor (CMOS) circuit. In general, a CMOS circuit tends to dissipate power at all times—be it active or inactive. The power consumed by the circuit when it is performing computational tasks is known as dynamic power. On the contrary, the power lost due to current leakage during which the circuit is dormant is referred to as static power. By carefully and properly designing the circuit, current leakage can be suppressed to its minimum. Hence, dynamic power consumption is usually significantly higher than its static counterpart. Some of the techniques that could be adopted to save dynamic power consumption include reducing the supply voltage, clock frequency, clock power, and dynamic effective capacitance. By probing into the activity factors of the design modules, the techniques can be applied to those with high power consumption.

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Section: Switching Powermentioning

confidence: 99%

“…The tri-gate transistor is more popularly referred to as the FinFET, owing to its protruding drain and source structures, which resemble the fin of a fish. In comparison with the planar MOSFETs, the FinFET has better control of the current flow, thereby reducing leakage [11].…”

Section: Static Powermentioning

confidence: 99%