Design and Characterization of a Room Temperature All-Solid-State Electronic Source Tunable From 2.48 to 2.75 THz

Maestrini, A.; Mehdi, Imran; Siles, José V.; Ward, J.; Lin, Robert; Thomas, B.; Lee, C.; Gill, John; Chattopadhyay, Goutam; Schlecht, Erich; Pearson, John C.; Siegel, Peter H.

doi:10.1109/tthz.2012.2183740

Cited by 91 publications

(53 citation statements)

References 21 publications

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“…The terahertz (THz) frequency spectrum (0.3–10.0 THz) offers several fascinating applications such as ultrahigh‐speed wireless communication, biomedical screening, remote sensing of explosive materials, food diagnostic, inspection of interstellar medium and planetary atmosphere, short‐range terrestrial and airborne communication, space‐based communication, spectroscopy, and quality inspection in various industrial branches . Moreover, the THz waves are highly suitable for bio‐sensing, bio‐imaging, and various medical and pharmaceutical applications .…”

Section: Introductionmentioning

confidence: 99%

Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation

Acharyya

2019

Physica Status Solidi (a)

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Herein, the possibilities of tuning oscillation frequency and power in terahertz (THz) graphene nanoribbon (GNR)‐based avalanche transit time (ATT) sources by introducing a third terminal on their planar structure are discussed. In this regard, a three‐terminal planner impact ATT (IMPATT) structure based on GNR on oxide (SiO2) is proposed. Inherent power combining capabilities of parallel‐connected IMPATT structures are utilized to increase the power output at THz frequencies. Static, high frequency, and noise simulations are carried out using in‐house simulation codes based on self‐consistent quantum drift–diffusion model. Results show that around 0.7–5.3% and 9.0–13.3% modulation of frequency and power output are achievable, respectively, in the GNR IMPATT oscillators operating in the frequency range of 1.0–10.0 THz, respectively, by applying a suitable amount of voltage at the third or controlling terminal; however, the enhancement of noise level at the output is observed to be insignificant as a result of using the active third‐terminal control.

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Section: Introductionmentioning

confidence: 99%

Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation

Acharyya

2019

Physica Status Solidi (a)

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“…Due to the commercial availability of solid-state high power sources in W-band and the current difficulties in implementing solid-state amplifiers above this frequency range, it is a common option to use a W-band high power source to drive a multiplier chain to form a solid-state THz signal generator [6,7,8]. Therefore, the first multiplier is one of the key components in the chain as it is required to handle high input power so as to produce sufficient output power to drive the subsequent multipliers in the chain.…”

Section: Introductionmentioning

confidence: 99%

190 GHz high power input frequency doubler based on Schottky diodes and AlN substrate

Chen

Wang

Alderman

et al. 2016

IEICE Electron. Express

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This paper presents the design and development of a 190 GHz Schottky-diode frequency doubler (×2 multiplier) which can handle up to 260 mW input power. In order to increase the power handling capability, a modeling approach incorporating computer-aided design (CAD) load-pull techniques to characterize the diode performance is proposed. By the use of this approach, effects of several critical diode parameters on the power handling issue are quantitatively investigated and based on the analysis, a discrete diode chip is designed for the doubler. To ensure rapid heat sink in the doubler circuitry, low cost aluminum nitride ceramic (AlN) is selected as the dielectric material of the circuit substrate, which has significantly better thermal conductivity compared with currently widely-used fused quartz. The doubler circuitry is based on a balanced configuration, which brings a merit of avoiding the use of a filter for the input and output signal isolation. The doubler circuit is optimized by co-simulation using ANSYS's HFSS and Keysight's ADS. The measurements show that the doubler can handle up to 260 mW input power with a power conversion efficiency of nearly 8%, resulting in 20 mW output power at 193 GHz.

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“…Several approaches to generate THz wave have been investigated including solid state electron devices, optical devices, and vacuum electron devices (VEDs), etc. [6]- [10]. The continuous wave (CW) backward-wave oscillator (BWO) is an important VED of frequency-tunable, high operation frequency, and compact dimension THz radiation.…”

Section: Introductionmentioning

confidence: 99%

A Modified Slow-Wave Structure for Backward-Wave Oscillator Design in THz Band

Zhang

Wei

Shi

et al. 2014

IEEE Trans. THz Sci. Technol.

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In this paper, a novel slow-wave structure (SWS), called quasi-parallel-plate (QPP), is proposed for terahertz (THz) backward-wave oscillator BWO design. Compared with the conventional SWSs, the novel SWS has a wider "cold" bandwidth and higher interaction impedance. The Particle-in-cell (PIC) results show that the BWO can produce over 0.82 W output power in the operating frequency range from 0.82 to 1 THz by utilizing an operating voltage range from 5 to 10 kV. The interaction efficiency over the entire operating frequency band is above 2.8%. This SWS, which employing a circular electron beam of 3 mA, can be considered as a promising THz SWS for BWO design with characteristics of moderate operating voltage, wide tunable bandwidth, high efficiency, and compact structure.Index Terms-Backward-wave oscillator (BWO), quasi-parallelplate (QPP), slow-wave structure (SWS), terahertz (THz) source.

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Design and Characterization of a Room Temperature All-Solid-State Electronic Source Tunable From 2.48 to 2.75 THz

Cited by 91 publications

References 21 publications

Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation

Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation

190 GHz high power input frequency doubler based on Schottky diodes and AlN substrate

A Modified Slow-Wave Structure for Backward-Wave Oscillator Design in THz Band

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