Design and characteristics of a-Si-based micro-bolometers with shared-anchor structure in vacuum packaged systems

Jung, Ho; Kim, Tae Hyun; Kim, Gyungtae; Yang, Chung Mo; Park, Jae Hong; Kim, Hee Yeoun

doi:10.1007/s00542-014-2073-3

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…We used amorphous Si as a resistor; its TCR has the negative value, which is typical of a semiconductor, as described in Equation (6). The thermoelectrical characteristics of amorphous Si and the experimental results were reported in [ 35 ].

…”

Section: Resultsmentioning

confidence: 99%

Development and Characterization of Low Temperature Wafer-Level Vacuum Packaging Using Cu-Sn Bonding and Nanomultilayer Getter

et al. 2023

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Most microsensors are composed of devices and covers. Due to the complicated structure of the cover and various other requirements, it difficult to use wafer-level packaging with such microsensors. In particular, for monolithic microsensors combined with read-out ICs, the available process margins are further reduced due to the thermal and mechanical effects applied to IC wafers during the packaging process. This research proposes a low-temperature, wafer-level vacuum packaging technology based on Cu-Sn bonding and nano-multilayer getter materials for use with microbolometers. In Cu-Sn bonding, the Cu/Cu3Sn/Cu microstructure required to ensure reliability can be obtained by optimizing the bonding temperature, pressure, and time. The Zr-Ti-Ru based nanomultilayer getter coating inside the cap wafer with high step height has been improved by self-aligned shadow masking. The device pad, composed of bonded wafer, was opened by wafer grinding, and the thermoelectrical properties were evaluated at the wafer-level. The bonding strength and vacuum level were characterized by a shear test and thermoelectrical test using microbolometer test pixels. The vacuum level of the packaged samples showed very narrow distribution near 50 mTorr. This wafer-level packaging platform could be very useful for sensor development whereby high reliability and excellent mechanical/optical performance are both required. Due to its reliability and the low material cost and bonding temperature, this wafer-based packaging approach is suitable for commercial applications.

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…”

Section: Resultsmentioning

confidence: 99%

Development and Characterization of Low Temperature Wafer-Level Vacuum Packaging Using Cu-Sn Bonding and Nanomultilayer Getter

et al. 2023

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“…According to the form of Fourier's Law of thermal conductance, the heat loss can be written as [5] ( )…”

Section: (1 )mentioning

confidence: 99%

“…Vanadium oxide (VO x ) is not a standard material in the IC technology and is controlled by the US military. But amorphous silicon is compatible with CMOS fabrication and is increasingly used in membrane-type sensor [3][4][5]. Accordingly, design, fabrication and read-out method of the micro Pirani gauge based on a-Si thin membrane is highly required.…”

Section: Introductionmentioning

confidence: 99%

The Micro Pirani Gauge with Low Noise CDS-CTIA for In-Situ Vacuum Monitoring

Kim¹,

Kim²,

Park³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-A resistive micro Pirani gauge using amorphous silicon (a-Si) thin membrane is proposed. The proposed Pirani gauge can be easily integrated with the other process-compatible membrane-type sensors, and can be applicable for in-situ vacuum monitoring inside the vacuum package without an additional process. The vacuum level is measured by the resistance changes of the membrane using the low noise correlated double sampling (CDS) capacitive trans-impedance amplifier (CTIA). The measured vacuum range of the Pirani gauge is 0.1 to 10 Torr. The sensitivity and non-linearity are measured to be 78 mV / Torr and 0.5% in the pressure range of 0.1 to 10 Torr. The output noise level is measured to be 268 μV rms in 0.5 Hz to 50 Hz, which is 41.2% smaller than conventional CTIA.

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Infrared detector materials

Ravindra

2022

Microbolometers

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Design and characteristics of a-Si-based micro-bolometers with shared-anchor structure in vacuum packaged systems

Cited by 5 publications

References 2 publications

Development and Characterization of Low Temperature Wafer-Level Vacuum Packaging Using Cu-Sn Bonding and Nanomultilayer Getter

Development and Characterization of Low Temperature Wafer-Level Vacuum Packaging Using Cu-Sn Bonding and Nanomultilayer Getter

The Micro Pirani Gauge with Low Noise CDS-CTIA for In-Situ Vacuum Monitoring

Infrared detector materials

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