Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers

Shih, Sean; Deal, W.R.; Yamauchi, Daisuke; Sutton, W.; Chen, Y.C.; Smorchkova, I.; Heying, B.; Wójtowicz, M.; Siddiqui, M.

doi:10.1109/mwsym.2009.5165785

Cited by 16 publications

(7 citation statements)

References 13 publications

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“…따라서 S/C/X-대역의 광대역에 평탄한 이득 특성과 입/출력 정합이 쉽고, 칩 사 이즈를 줄일 수 있는 저항 피드백 구조를 이용하였다 [7], [8] . Ref [3] Ref [4] Ref [6] …”

Section: ⅰ 서 론unclassified

A S/C/X-Band GaN Low Noise Amplifier MMIC

Han¹,

Kim²

2017

J. Korean Inst. Electromagn. Eng. Sci.

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본 논문은 0.25 um GaN HEMT 공정을 이용하여 S/C/X-대역에서 저항 피드백 구조의 저잡음 증폭기 MMIC에 관한 연구이다. GaN AbstractThis paper presents a S/C/X-band LNA MMIC with resistive feedback structure in 0.25 um GaN HEMT process. The GaN devices have advantages as a high output power device having high breakdown voltage, energy band gap and stability at high temperature. Since the receiver using the GaN device with high linearity can be implemented without a limiter, the noise figure of the receiver can be improved and the size of receiver module can be reduced. The proposed GaN LNA MMIC based on 0.25 um GaN HEMT device is achieved the gain of > 15 dB, the noise figure of < 3 dB, the input return loss of > 13 dB, and the output return loss of > 8 dB in the S/C/X-band. The current consumption of GaN LNA MMIC is 70 mA with the drain voltage 20 V and the gate voltage -3 V.

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Section: ⅰ 서 론unclassified

A S/C/X-Band GaN Low Noise Amplifier MMIC

Han¹,

Kim²

2017

J. Korean Inst. Electromagn. Eng. Sci.

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“…Table I compares the performance of the state-of-the-art wide band pHEMT low noise amplifiers. To the best of our knowledge, the chip adopting the proposed gate biasing circuit in this letter has the widest operating temperature ranging from −55°C to 125°C compared with references [11,12,13,14,15] while ΔNF and ΔGain normalized with temperature are excellent and also owns a quite low power consumption of 160 mW while keeping an excellent RF performance such as NF and Gain.…”

Section: Measurementsmentioning

confidence: 97%

4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit

Chen¹,

Wang²,

Chen³

et al. 2017

IEICE Electron. Express

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A broadband low-noise amplifier (LNA) MMIC with a novel onchip switchable gate biasing circuit is proposed. The biasing circuit is able to switch on/off the low noise amplifier and compensate the variation of threshold voltage (V th ) and temperature, hence improving the robustness of the amplifier over a wide operating frequency range. The switching frequency is up to 1 MHz, and the fluctuations of on-state quiescent current and power gain of the amplifier are within ²7.9% and ²0.8% when the threshold voltage varies from −0.15 V to 0.15 V. The power gain variation is stabilized within ²1.25 dB by the biasing network, while the temperature changes from −55°C to 125°C. Realized in 0.15 µm E-mode pHEMT technology with size of 2.0 mm × 1.3 mm, the LNA provides a typical gain of 24 dB while maintaining input and output return loss better than 10 dB and the noise figure (NF) of the LNA smaller than 1.6 dB from 4 GHz to 20 GHz.

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“…Most of the achievements in the 2000s were based on the CMOS [49, 50, 56, 57, 63-67, 69, 70, 72-74, 77, 82-84, 86, 87, 90-93, 95, 96, 98, 100, 101, 103-105, 107-117, 119-124, 127-131, 133-138, 140-142, 144, 145, 147-151], BiC-MOS [47, 55, 59, 60, 62, 78-81, 85, 118, 143], and HEMT [53,71,88,89,97,106,152] integrated circuits. Since the 1980s, usually but not always, HEMT has been employed for the frequencies higher than 10 GHz [21,24,27,32,36,37,39,71,89,106,152] and on the other hand, CMOS and BiCMOS are applied for frequencies lower than 10 GHz [35, 38, 41, 47, 49, 50, 55-57, 60, 63-67, 69, 72-74, 77, 80-84, 86, 87, 90-93, 95, 96, 98, 100, 101, 103-105, 107-124, 128-138, 140, 142-145, 148-151]. The available exceptions to the author are [3,53,59,88,97,127,141], and [147].…”

Section: In the 2000smentioning

confidence: 99%

Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers

Cited by 16 publications

References 13 publications

A S/C/X-Band GaN Low Noise Amplifier MMIC

A S/C/X-Band GaN Low Noise Amplifier MMIC

4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit

Ultrawideband LNA 1960–2019: Review

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