2014
DOI: 10.1109/tmag.2014.2325536
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Design and Analysis of Si Interconnects for All-Spin Logic

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Cited by 32 publications
(22 citation statements)
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“…This makes silicon attractive for use as efficient spin interconnects [130] in lateral spin valves and logic gates [42,43] known as all-spin logic [44]. Spin interconnects are critical for emerging spin-driven devices as they allow avoiding the spin-charge signal conversion thus reducing energy, delay, and circuitry.…”
Section: Tunnel Barriers and Magnetoresistance At Elevated Temperaturementioning
confidence: 99%
“…This makes silicon attractive for use as efficient spin interconnects [130] in lateral spin valves and logic gates [42,43] known as all-spin logic [44]. Spin interconnects are critical for emerging spin-driven devices as they allow avoiding the spin-charge signal conversion thus reducing energy, delay, and circuitry.…”
Section: Tunnel Barriers and Magnetoresistance At Elevated Temperaturementioning
confidence: 99%
“…This large deviation can impair the reliability of the interconnect significantly since the DW can reach the end of the wire with quite different delays. The similar constraint can be also be observed in interconnects based on spin-transfer torque switching [8] [9], where the delay distribution becomes wider as the interconnect length increases or the applied voltage is reduced. As a result, to reduce the noise effect on DW automotion, an interconnect with low Gilbert damping is recommended since the magnitude of the thermal field can be reduced, and the deviation from the noiseless situation is largely suppressed using a low damping channel as shown in Fig.…”
Section: Thermal Fluctuationsmentioning
confidence: 57%
“…For ASL, interconnects have been studied using a lateral conventional spin valve with the spin-transfer-torque switching using copper, aluminum, and silicon as channel materials [8] [9]. It is shown that the energy of the interconnect is significantly reduced by eliminating the shunt path in ASL.…”
Section: Introductionmentioning
confidence: 99%
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“…The spin transport characteristics of spin circuit for NLSV are captured based on the lumped spin circuit model used in [4], [15] and [24]. A lumped circuit representation is derived for each region (FM, graphene and tunnel region) of the spin circuit structure, by solving the spin diffusion equations for spin and charge transport separately.…”
Section: Tcl Modelmentioning
confidence: 99%