Design and Analysis of a Millimeter-Wave Direct Injection-Locked Frequency Divider With Large Frequency Locking Range

Wu, Chung‐Yu; Yu, C. C.

doi:10.1109/tmtt.2007.902067

Cited by 64 publications

(34 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(2) shows that the phase of the phase tuner, and hence the LC-tank, can be changed by varying the capacitance (through C 2 ) and/or the inductance (by adjusting the gate bias of M1 and M2). Inductance tuning using a fixed inductor in parallel with an NMOS transistor was used for VCO [6].…”

Section: Circuit Design and Analysismentioning

confidence: 99%

A 10.5‐GHz divide‐by‐3 injection‐locked frequency divider with enhanced locking range by even‐harmonic phase tuning in 0.18 μm BiCMOS

Lee

Jang

Nguyen

2014

Micro & Optical Tech Letters

View full text Add to dashboard Cite

A fully integrated 10.5-GHz divide-by-3 (1/3) injectionlocked frequency divider (ILFD) that can provide extra locking range is presented. The ILFD consists of a previously measured on-chip 10.5-GHz voltage controlled oscillator (VCO) functioning as an injection source, a 1/3 ILFD core, and an output inverter buffer. A phase tuner implemented using an asymmetric inductor is proposed to increase the locking range through even-harmonic phase tuning. With a fixed internal injection signal power of only 218 dBm, a 25% enhancement in the locking range from 12 to 15 MHz is achieved with the proposed phase tuning. The proposed even-harmonic phase tuning can be used to provide extra locking range to those achieved by other techniques. The proposed integrated 1/3 ILFD has a frequency tuning range of 3.3-4.2 GHz. It is realized using a 0.18-lm BiCMOS process, occupies 0.6 mm 3 0.7 mm, and consumes 10.6 mA while the ILFD core alone only consumes 6.15 mA from 1.8-V supply voltage.

show abstract

Section: Circuit Design and Analysismentioning

confidence: 99%

A 10.5‐GHz divide‐by‐3 injection‐locked frequency divider with enhanced locking range by even‐harmonic phase tuning in 0.18 μm BiCMOS

Lee

Jang

Nguyen

2014

Micro & Optical Tech Letters

View full text Add to dashboard Cite

show abstract

“…However, the bias current of the core will vary significantly in the process, as will the temperature, and hence the size of the cross-coupled pair needs to be chosen carefully. In the design of the self-oscillating oscillator, the center-tap inductor is chosen at the peak of the Q-factor (~22.4), which can reduce the power consumption without reducing the frequency locking range [6]. The optimum width of the cross-coupled pair (M 1 and M 2 ) is 1.2×16 μm with a bias current of 5.62 mA at a supply voltage of 0.7 V. For large signal operations, a common source buffer amplifier is adopted to keep the linearity stable.…”

Section: A Circuit Structurementioning

confidence: 99%

“…Nevertheless conventional ILFD has the disadvantage of a narrow locking range as a result of the large parasitic capacitance of the input transistor. To address this weakness, direct injection-locked frequency dividers (DILFD) using different techniques have been developed [2]- [6].…”

Section: Introductionmentioning

confidence: 99%

A V-Band CMOS Direct Injection-Locked Frequency Divider Using Forward Body Bias Technology

Chen

Huang

et al. 2010

IEEE Microw. Wireless Compon. Lett.

View full text Add to dashboard Cite

-In this paper, a V-band direct injection-locked frequency divider (ILFD) using forward body bias technology is presented. The divider is implemented in a 0.13-μm CMOS process. The measurements show that the free-running frequency of the divider is 28.67 GHz, the total locking range is 14.8% at 58 GHz with 3.93 mW from a low supply voltage of 0.7 V, and the measured phase noise of the divider is -127.76 dBc/Hz at 1-MHz offset. The output power of the divider is higher than -9 dBm from 53 to 61 GHz, and a good figure of merit (FOM) of 2.19 is achieved.Index Terms -CMOS, forward body-biasing, injection-locked frequency divider (ILFD), low supply voltage, phase-locked loop. I. INTRODUCTIONThe voltage-controlled oscillator (VCO) and high frequency divider are the two primary blocks of the phase-locked loop (PLL), which is widely used in wireless applications. The main design concerns of the VCO are the oscillating frequency, output power, and phase noise. Furthermore, the main design concerns of the frequency divider are the operating frequency and locking range. For mm-wave PLL, in order to cover the frequency shift of VCO caused by the process variation, a wide frequency locking range for the divider is essential. In addition, the output power of the frequency divider is also important for the second divider stage. Numerous frequency dividers have been reported for different applications. Generally, high frequency dividers can be classified into dynamic logic, regenerative and LC-resonator types. While dynamic logic frequency dividers can achieve very low power consumption and various division ratios, they can only operate in a few gigahertz.Common-mode logic (CML) dividers [1] and Miller dividers have the advantages of high operating frequency and wide locking range, but usually suffer from high power consumption. In contrast, injection-locked frequency dividers (ILFD) can easily operate at the high frequency but also have low power consumption, and thus are commonly used in mm-wave PLL as the first divider stage. Nevertheless conventional ILFD has the disadvantage of a narrow locking range as a result of the large parasitic capacitance of the input transistor. To address this weakness, direct injection-locked frequency dividers (DILFD) using different techniques have been developed [2]-[6].In this paper, the design of a V-band direct injection-locked frequency divider using body bias technology for wide locking range is presented. This work achieves an operating frequency from 53 GHz to 61.68 GHz as well as low power consumption.

show abstract

“…However, the frequency dividers with direct injection have not been sufficiently treated in the literature from an analytical point of view, although they are widely used in applications for a very low input capacitance [11,12] and a wide locking range [11,13], which is one of the most important figures of merit of ILFDs. In the present work, we wish to demonstrate the accuracy of the model of ILFDs developed in [9], here made more general, as well as the accuracy of the methodology for their analysis under steady-state operating conditions.…”

Section: Introductionmentioning

confidence: 99%

Modeling, Analysis, and Experimental Validation of Frequency Dividers with Direct Injection

Buonomo¹,

Schiavo²

2013

Journal of Electrical and Computer Engineering

View full text Add to dashboard Cite

An analytical model and a methodology are presented for the analysis of CMOS injection-locked frequency dividers with direct injection, which are used in modern wireless communication systems. The amplitude and phase of the oscillation in the synchronous operation mode, as well as the locking range, are found in explicit form. The width of the locking range is determined by the condition of the existence and stability of synchronous oscillations. The accuracy of the model and of the presented formulas is validated through a comparison with experimental results, which are in good agreement with the analytical ones.

show abstract

Design and Analysis of a Millimeter-Wave Direct Injection-Locked Frequency Divider With Large Frequency Locking Range

Cited by 64 publications

References 16 publications

A 10.5‐GHz divide‐by‐3 injection‐locked frequency divider with enhanced locking range by even‐harmonic phase tuning in 0.18 μm BiCMOS

A 10.5‐GHz divide‐by‐3 injection‐locked frequency divider with enhanced locking range by even‐harmonic phase tuning in 0.18 μm BiCMOS

A V-Band CMOS Direct Injection-Locked Frequency Divider Using Forward Body Bias Technology

Modeling, Analysis, and Experimental Validation of Frequency Dividers with Direct Injection

Contact Info

Product

Resources

About