Design a Continuous Switching Test Circuit for Power Devices to Evaluate Reliability

Hayashi, Shin’ichiro; Wãda, Keiji

doi:10.1541/ieejjia.21004267

Cited by 9 publications

(2 citation statements)

References 21 publications

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“…To clarify the characteristic fluctuations due to temperature, measurements were conducted at ambient temperatures of 25 • C and 150 • C for the DUT. In this study, the "advanced high-temperature gate bias (HTGB) test" was conducted for the accelerated aging test, thereby enabling the accelerated aging of the gate oxide under the continuous switching condition of the DUT [37], [41], [42]. One of the features of the advanced HTGB test is that it enables accelerated aging under conditions similar to those in the actual use of power devices, compared to the conventional accelerated aging of gate oxide under static conditions.…”

Section: Figure 4 Principle Of Measurement By the Quasi-static Method...mentioning

confidence: 99%

Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs

Hayashi,

Wada

2024

IEEE Open J. Power Electron.

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This paper proposes a gate drive circuit with a condition monitoring function for detecting the gate oxide degradation in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). Trapped charges in the gate oxide can cause fluctuations in the on-resistance and gate threshold voltages. These phenomena affect the long-term reliability of power conversion circuits. The proposed condition monitoring function detects the degradation of the gate oxide by measuring the input capacitance C iss versus the gate-source voltage v GS characteristics (C iss -v GS characteristics) of SiC MOSFETs implemented in power conversion circuits. Experiments on the proposed gate drive circuit were conducted using a 400 W-rated buck converter circuit in which a SiC MOSFET is implemented. The experimental results show that the gate drive circuit is capable of online measurement of C iss -v GS characteristics and gate drive at 20 kHz. The online measurement of the C iss -v GS characteristics corresponds to the offline measurement with a measurement instrument, indicating the effectiveness of the gate drive circuit.INDEX TERMS Condition monitoring, gate drive circuit, gate oxide, long-term reliability, SiC MOSFET.

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Section: Figure 4 Principle Of Measurement By the Quasi-static Method...mentioning

confidence: 99%

Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs

Hayashi,

Wada

2024

IEEE Open J. Power Electron.

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“…Silicon carbide (SiC) power semiconductor devices exhibit excellent characteristics of low on-resistance and low failure risk in high junction-temperature environments when compared to Si power semiconductor devices [12]- [14]. SiC MOSFETs exhibit these advantages and are one of the leading candidates used in solid-state circuit breakers.…”

Section: Introductionmentioning

confidence: 99%

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

Takamori,

Wada,

Saito

et al. 2024

IEEE Open J. Power Electron.

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This paper proposes a solid-state circuit breaker comprising silicon carbide (SiC) MOSFETs and a SiC diode, based on the principle of avalanche voltage clamping. The key challenge in realizing a solid-state circuit breaker lies in reducing conduction loss. A parallel connection of power semiconductor devices is the suitable configuration that can meet these requirements. However, in such a configuration, the current balance during cutoff operation may be affected by the variation in the breakdown voltage characteristics of the power semiconductor devices. To address this issue, the proposed circuit breaker employs clamping with a SiC merged pin-Schottky (MPS) diode, with high avalanche tolerance and robust characteristics under repetitive avalanche events. The effectiveness of the proposed solid-state circuit breaker is validated through experiments conducted in an unclamped inductive switching (UIS) test circuit using a 400-V, 50-A DC distribution system. Eventually, the demonstrations indicate that the SiC diode clamping method contributes to more compact implementations for solid-state circuit breakers.

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Gate Drive Circuit with In situ Condition Monitoring System for Detecting Gate Oxide Degradation of SiC MOSFETs

Hayashi

Wãda

2022

2022 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Design a Continuous Switching Test Circuit for Power Devices to Evaluate Reliability

Cited by 9 publications

References 21 publications

Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs

Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

Gate Drive Circuit with In situ Condition Monitoring System for Detecting Gate Oxide Degradation of SiC MOSFETs

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