Der MOSFET im dynamischen Betrieb

Paul, Reinhold

doi:10.1007/978-3-642-84836-0_3

Cited by 1 publication

(2 citation statements)

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“…C ij with i = j are denoted as terminal capacitances (self-capacitance) and C ij with i ̸ = j as interterminal capacitances (trans-capacitances). For the extraction of the equivalent lumped inter-terminal capacitances used in power MOSFET compact models, typically their reciprocity, C ds = C sd , C gd = C dg , and C gs = C sg [25]- [27], has been assumed. Based on (1a), (1b), reciprocity, and the Kirchhoff's system of equations for the power MOSFET equivalent circuit shown in Fig.…”

Section: A Power Mosfet Capacitance Relationsmentioning

confidence: 99%

See 1 more Smart Citation

Gate Capacitance Characterization of Silicon Carbide and Silicon Power mosfets Revisited

Stark

Tsibizov

Kovacevic-Badstuebner

et al. 2022

IEEE Trans. Power Electron.

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Capacitance-voltage (C-V) gate characteristics of power MOSFETs play an important role in the dynamic device performance. C-V characterization of the MOSFET gate structure is a necessary step for evaluating the MOSFET switching behavior and calibrating lumped equivalent capacitances of MOSFET compact models. This paper presents a comprehensive analysis on gate C-V measurements of silicon (Si) and silicon carbide (SiC) power MOSFETs leading to clear measurement guidelines. The requirements on the measurement setup, the selection of equivalent models used for the MOSFET capacitance extraction, and the measurement frequency range are defined and supported by an accurate C-V characterization of several Siand SiC power MOSFETs. The results show that the gate-source and gate-drain capacitances should be extracted at a frequency of some ten kHz rather than at 1 MHz, as typically adopted in datasheets, in order to avoid parasitic effects introduced by the measurement setup and package. Furthermore, analytical expressions for C dg and Csg were derived based on a lumped equivalent circuit, which explain the influence of the measurement setup and the package parasitics on the C-V measurements. Non-ideal measurement conditions are identified and correlated to the differences in C-V extraction with either parallel or series equivalent model. A new method is proposed to estimate the ratio of the MOSFET's on-state resistance components R ch and R drift based on the presented C-V measurement guidelines, which is applicable to all three-and four-terminal power MOSFETs.

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Section: A Power Mosfet Capacitance Relationsmentioning

confidence: 99%

“…Based on (1a), (1b), reciprocity, and the Kirchhoff's system of equations for the power MOSFET equivalent circuit shown in Fig. 1, the relationship between C ij , i, j ∈ {d, g, s}, C oss , C iss and C rss can be derived [25], [27] as…”

Section: A Power Mosfet Capacitance Relationsmentioning

confidence: 99%