Depth resolution in sputter depth profiling-characterization of a third batch of tantalum pentoxide on tantalum certified reference material by AES and SIMS

Seah, M. P.; Spencer, Steve J.; Gilmore, Ian S.; Johnstone, J. E.

doi:10.1002/(sici)1096-9918(200001)29:1<73::aid-sia695>3.0.co;2-3

Cited by 12 publications

(1 citation statement)

References 21 publications

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“…126 CRMs for surface analysis can be obtained from two other sources. Two CRMs are available from the European Institute for Reference Materials and Measurements: 127 ͑a͒ tantalum pentoxide on tantalum with two nominal thicknesses of 30 and 100 nm with certified amounts of O in the oxide layers and with sharp metal-oxide interfaces for optimization of sputter-depth-profiling conditions ͑BCR-261S͒; 128 and ͑b͒ antimony implanted in silicon for the measurement of Sb concentrations in SIMS depth profiles ͑IRMM-302͒. A multilayer GaAs/AlAs superlattice reference material is available through the SASJ for the optimization of ion-sputtering conditions in depth-profiling measurements by AES, XPS, and SIMS.…”

Section: Growth and Trends In Availability Of Analytical Resourcesmentioning

confidence: 99%

Growth and trends in Auger-electron spectroscopy and x-ray photoelectron spectroscopy for surface analysis

Powell

2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inPractical expressions for the mean escape depth, the information depth, and the effective attenuation length in Auger-electron spectroscopy and x-ray photoelectron spectroscopy Instrumentation and analytical methods of an x-ray photoelectron spectroscopy-scanning tunneling microscopy surface analysis system for studying nanostructured materials Rev. Sci. Instrum. 77, 083901 (2006); 10.1063/1.2221539 Information depth and the mean escape depth in Auger electron spectroscopy and x-ray photoelectron spectroscopy J. Vac. Sci. Technol. A 21, 274 (2003); 10.1116/1.1538370Consistent, combined quantitative Auger electron spectroscopy and x-ray photoelectron spectroscopy digital databases: Convergence of theory and experiment SiO 2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry J.

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Section: Growth and Trends In Availability Of Analytical Resourcesmentioning

confidence: 99%

Growth and trends in Auger-electron spectroscopy and x-ray photoelectron spectroscopy for surface analysis

Powell

2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Influence of interfacial depth on depth resolution during GDOES depth profiling analysis of thin alumina films

Shimizu

Habazaki

Skeldon

et al. 2001

Surface & Interface Analysis

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Factors controlling the depth resolution in radio frequency glow discharge optical emission spectroscopy (rf-GDOES) depth profiling analysis of thin films have been investigated using anodic alumina films of varying thicknesses with delta function marker layers of ∼2 nm width located at various depths from the oxide surface. In rf-GDOES depth profiling analysis, where a relatively large area of ∼4 mm in diameter is analysed, it was found that the depth resolution is determined mainly by the large-scale variation of sputtering rate across the crater. Despite the relatively large area analysed, the uniformity of sputtering rate across the crater was constant to within 1% under the optimum Ar pressure except for near-edge regions of ∼0.4 mm width, where the sputtering rate was ∼6% higher than in the central crater region. Owing to this relatively minor non-uniformity of sputtering rate, the depth resolution degrades approximately linearly with depth. A depth resolution of ∼1.3 nm was realized to depths of∼25 nm, where the degradation of depth resolution due to the non-uniformity in sputtering rate is insignificant. The depth resolution is close to the ultimate depth resolution in sputter depth profiling, claimed to be 0.7-1.0 nm, and arises from the minimal atomic mixing associated with film sputtering with Ar + ions of very low energy, ∼50 eV, in rf-GDOES analysis.

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Reproducibility in r.f.‐GDOES depth profiling analysis of thin films

Shimizu

Habazaki

Skeldon

et al. 2001

Surface & Interface Analysis

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The reproducibility in radiofrequency glow discharge optical emission spectroscopy (r.f.-GDOES) depth profiling has been examined using a 360 nm thick anodic alumina film with a chromium-containing delta-function layer. The time required to sputter through the film was constant, to within 1%, whereas the signal intensities of film species agreed to within 3%. This level of reproducibility together with high depth resolution makes the technique ideal for on-site quality control of various surface-enhanced industrial products, embracing electronics and protective surface treatments.

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Depth resolution in sputter depth profiling-characterization of a third batch of tantalum pentoxide on tantalum certified reference material by AES and SIMS

Cited by 12 publications

References 21 publications

Growth and trends in Auger-electron spectroscopy and x-ray photoelectron spectroscopy for surface analysis

Growth and trends in Auger-electron spectroscopy and x-ray photoelectron spectroscopy for surface analysis

Influence of interfacial depth on depth resolution during GDOES depth profiling analysis of thin alumina films

Reproducibility in r.f.‐GDOES depth profiling analysis of thin films

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