Depth resolution improvement in secondary ion mass spectrometry analysis using metal cluster complex ion bombardment

Abstract

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Surface Chemical Analysis Using Multiply Charged Ions

“…The SIMS excitation source is usually normal-incident and pulsed singly charged ions with energy of several keV. The depth profile of the surface atomic composition can be measured with nanometer resolution [1]. Therefore, SIMS with an ion beam is widely used in many fields.…”

Surface Analysis of Organic Materials with Polyatomic Primary Ion Sources

“…As can be seen, the efficiency is an order of magnitude greater for C 60 n+ than for that observed with Au 3 + or SF 5 + sources. Hence, if spot size is not a deterrent, C 60 + appears to be preferable over LMIG sources for analysis of organic materials.…”

Time‐of‐Flight secondary ion mass spectrometry (TOF‐SIMS) using the metal‐cluster‐complex primary ion of Ir4(CO)7+

“…[17,23] Hence, we expect that the orthogonal acceleration TOF-SIMS system with the metalcluster-complex ion source will be useful in the depth profiling …”

“…[17 -18] In the depth profiling of boron deltadoped silicon samples, high depth resolution of 0.9 nm was obtained at 5 keV. [17] Compared with conventional O 2 + ion beams, Ir 4 (CO) 7 + ion beams improved depth resolution by a factor of 2.5 under the same irradiation conditions. In the analysis of organic films of poly(methyl methacrylate), secondary ion mass spectra up to m/z 300 were obtained.…”