Depth Profiling Study of the CdTe/CdS/ITO/Glass Heterostructure with AES and GIXRD

Martel, A.; Caballero‐Briones, F.; Oliva, A.I.; Castro-Rodrı́guez, R.; Iribarren, A.; Bartolo‐Pérez, P.; Peña, J. L.

doi:10.1002/1521-3951(200007)220:1<261::aid-pssb261>3.0.co;2-4

Cited by 12 publications

(7 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The most popular TCO tin-doped indium oxide (ITO) has some shortcomings limiting its applications in PVs [2] and OLED [3] structures. This stimulated an intense research on alternative TCO materials.…”

Section: Introductionmentioning

confidence: 99%

Spray-pyrolysis Cd2SnO4 films for electrochemical applications

Abrutis¹,

Valinčius²,

Baltrūnas³

et al. 2007

Thin Solid Films

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Spray-pyrolysis Cd2SnO4 films for electrochemical applications

Abrutis¹,

Valinčius²,

Baltrūnas³

et al. 2007

Thin Solid Films

View full text Add to dashboard Cite

“…Reasons include less than optimum conductivity and transparency, high cost, and cation diffusion between ITO and the Cd chalcogenide PV-active layers. [2] To address this problem, thin films of the Cd-containing TCO, cadmium stannate (Cd 2 SnO 4 ), have recently been grown by rf sputtering. [3] These films exhibit promising electrical and optical properties, including a high carrier mobility (59.6 cm 2 V ±1 s ±1 ).…”

mentioning

confidence: 99%

“…[17] Bond distances are consistent with strong metal±ligand interactions. The average Cd±O bond distance in the distorted octahedral coordination sphere of 1, 2.278(1) , is significantly shorter than that in [Cd(acac) 2 ] n , 2.297 (2) . [17] Similarly, the average Cd±N bond distance in 1, 2.351(2) , is significantly shorter than those of the similar mixed b-diketonate-diamine complexes, Cd(acylpyrazolonato) 2 (TME-DA), [18] and Cd(acac) 2 (phen), [19] with Cd±N = 2.373(3) and 2.368(2) , respectively.…”

mentioning

confidence: 99%

Transparent Conducting CdO Thin Film Growth Using a Highly Volatile, Thermally and Air-Stable Cadmium Precursor

Babcock¹,

Wang²,

Metz³

et al. 2001

Chem. Vap. Deposition

View full text Add to dashboard Cite

The growth and properties of transparent conducting oxides (TCOs) have recently been the subject of intense academic and industrial investigation. [1] This reflects a plethora of technologically important TCO applications ranging from photovoltaic (PV) cells to flat-panel displays and organic light-emitting diodes. While tin-doped indium oxide (ITO) has been heavily studied as the TCO layer for a variety of opto-electronic applications (including transparent electrodes for PVs), [1] and reports have documented the growth of ITO films via numerous techniques, ITO is not ideally suited for use in future PV systems. Reasons include less than optimum conductivity and transparency, high cost, and cation diffusion between ITO and the Cd chalcogenide PV-active layers. [2] To address this problem, thin films of the Cd-containing TCO, cadmium stannate (Cd 2 SnO 4 ), have recently been grown by rf sputtering. [3] These films exhibit promising electrical and optical properties, including a high carrier mobility (59.6 cm 2 V ±1 s ±1 ). [3] However, the lack of suitable Cd precursors has so far impeded the growth of Cd 2 SnO 4 , or any other Cd-based TCO thin film grown by efficient CVD techniques. Thin films of the parent TCO, CdO, have been extensively studied and are known to be highly conductive, primarily due to various defect structures. While CdO has a modest intrinsic bandgap (~2.3 eV), [4] it serves as an excellent model material for the development of TCO CVD processes. Furthermore, previous work in this laboratory and elsewhere has shown that n-type aliovalent doping of CdO has profound effects on the electronic structure, significantly enhancing both the conductivity and the bandgap by introducing n-type charge carriers [5±8] and therefore blueshifting the band edge via a Burstein±Moss shift. [5,6,9] Metal±organic (MO) CVD is a widely used film growth process which complements physical vapor deposition techniques such as rf sputtering, and certain characteristics of MOCVD are particularly attractive for TCO thin film growth. Growth conditions are closer to ambient, growth at higher O 2 partial pressures is possible, conformal coverage over complex three-dimensional features can be achieved, and the process is amenable to very large-scale depositions. All these attractions afford a technique engineered for maximum overall growth efficiency and diverse applications. However, a crucial feature for a useful MOCVD growth process is the necessity of highly volatile, thermally stable, easy to handle, metal±organic precursors. Such precursors must decompose cleanly at the substrate surface during film growth since premature decomposition causes involatile metal species that remain in the precursor reservoir, while complexes that are too thermally stable decompose incompletely, thereby contaminating the reactor and resultant films.To date, growth of Cd-containing films via MOCVD has only been achieved using dimethylcadmium (CdMe 2 ) or its derivatives as precursors. While CdMe 2 can be used for the growth of the heavier C...

show abstract

“…Thin films of Cadmium stannate were fabricated by spraying a mixture of aqueous solutions of Cd(CH 3 COO) 2 and SnCl 2 .2H 2 O in the molecular weight ratio 4:1. A few ml of concentrated Hydrochloric acid was added to get clear solution.…”

Section: Methodsmentioning

confidence: 99%

“…The most popular TCO, tin-doped indium oxide (ITO) has some shortcomings limiting its applications in PVs and OLED structures [2,3]. This stimulated an intense research on alternative TCO materials and is now the subject of numerous investigations for alternative material to ITO for PVs device structures [4].…”

Section: Introductionmentioning

confidence: 99%

Structural, electrical and surface morphological studies of Cd2SnO4 and Mg doped Cd2SnO4 thin films

Jayaram

Jaya

Prasanth

et al. 2011

Trans Indian Inst Met

View full text Add to dashboard Cite

The technologically important conductive Cadmium stannate (Cd 2 SnO 4 ) and Magnesium doped cadmium stannate (Cd 2 SnO 4 : Mg) thin films were prepared using Cadmium acetate and stannous chloride by spray pyrolysis technique. Films prepared are crystalline and have cubic CdO phase with SnO 2 . The X-ray diffraction patterns of both thin films shows perfect crystalline structure and from the data, the particle diameter of both films were calculated. Atomic Force Microscopy (AFM) of both films reveals the uniform thickness of the films and the presence of uniform grain growth in Cd 2 SnO 4 and Mg doped Cd 2 SnO 4 thin films. Thickness of Cadmium stannate film is 725nm and that of Magnesium doped Cadmium stannate film is 285nm. The indirect band gap energy of Cd 2 SnO 4 film is 2.71eV and for magnesium doped Cd 2 SnO 4 is 2.97eV were observed from the UV-Visible absorption spectrum studies. Presence of uniform grain growth is found in both thin films. The doping of Magnesium in Cadmium stannate film improves the electrical properties without affecting its structural properties.

show abstract

Depth Profiling Study of the CdTe/CdS/ITO/Glass Heterostructure with AES and GIXRD

Cited by 12 publications

References 12 publications

Spray-pyrolysis Cd2SnO4 films for electrochemical applications

Spray-pyrolysis Cd2SnO4 films for electrochemical applications

Transparent Conducting CdO Thin Film Growth Using a Highly Volatile, Thermally and Air-Stable Cadmium Precursor

Structural, electrical and surface morphological studies of Cd2SnO4 and Mg doped Cd2SnO4 thin films

Contact Info

Product

Resources

About