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This work reports the synthesis of novel quaternary transparent conducting oxide Cd(1-x)Sn(1-x)InxGaxO3( x=0.1, 0.2, 0.3) at 1225°C via solid state reaction route. The investigations on structural, optical and electrical properties have been carried out. Powder X-ray diffraction revealed the phase purity and distorted orthorhombic structure of the species synthesized. Distortion of the structure is due to the substitution of In3+and Ga3+in CdSnO3 (JCPDS card no.340885) matrix. The optical transmittance approximated by the reflectance shows considerable increase in the transmittance of visible light along with the increase of substitution. Typical Burstein-Moss effect is observed with the increase in x value as a variation in optical bandgap from 2.7 to 2.9eV. Four point Hall measurements by Van der-Pauw method exhibit superior properties in charge carrier concentration and mobility. Maximum bulk charge concentration of 4.78x1017 cm-3is obtained for x=0.3. Hall mobility depends on carrier concentration and steeply increases with the carrier concentration. Considerable drop in the resistivity of the material along with higher transmittance is a critical finding in the experiment.