Depth profiling of interfacial fluctuation with nanometer order in ultrathin silicon-on-insulator structure by classical Rutherford backscattering using 10B ions

Hoshino, Yasushi; Toyohara, Taiga; Takada, S.; Yachida, Gosuke; Nakata, Jyoji

doi:10.1016/j.nimb.2018.02.029

Cited by 1 publication

(1 citation statement)

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“…We adopted the projectile of 10 B ion instead of the ordinary 4 He ion in order to improve depth resolution for ultrathin film analysis. 32) The scattered 10 B energy and yields were detected by Si surface barrier solid state detectors. In the channeling spectrum, the scattering yields of well-collimated incident 10 B 2+ ion beam aligned parallel to the low crystal axis of c-Si substrate under a-Si layer are significantly decreased; as a result, the thickness of the amorphous-like region can be accurately determined.…”

Section: Methodsmentioning

confidence: 99%

Epitaxial growth of a deposited amorphous Si layer formed on hydrogen-terminated Si(001) surfaces by ion beam induced epitaxial crystallization combined with ion beam mixing

Yachida¹,

Hoshino²,

Nakata³

2019

Jpn. J. Appl. Phys.

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We have investigated the crystallization process of an amorphous Si layer deposited on hydrogen-terminated Si(001) surfaces by ion beam induced epitaxial crystallization (IBIEC) combined with the ion beam mixing (IBMX) method, aiming at the clarification of the essential IBMX effect on crystallization. In this study, we deposited a 10−15 nm thick amorphous Si layer on clean and two kinds of H-terminated Si(001) surfaces of dihydride (DH) and monohydride (MH), and then carried out the IBMX by 10-keV Si + ion irradiation with a fluence of 1 × 10 15 ions cm −2 at RT near the amorphous/crystalline interface followed by the IBIEC treatment by 180-keV Ar + ion irradiation with fluences of 5 × 10 15 and 1 × 10 16 ions cm −2 at 300 °C-500 °C. The thickness of the crystallized layer was quantitatively measured by the Rutherford backscattering channeling method. We found that the epitaxial crystallization of the amorphous Si layer formed on both DH and MH surfaces can be realized by IBMX followed by IBIEC treatments at significantly lower temperatures than 500 °C in all processes. This fact suggests that the epitaxial crystallization of the amorphous layer formed on the crystalline substrate surface terminated by the obstructive layer is effectively enhanced, regardless of the structure and coverage of the interfacial layers. It should be emphasized that the IBIEC combined with IBMX treatments make it possible to epitaxially crystallize the amorphous layers formed on obstructive layers covering crystalline substrates at significantly low temperatures.

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Section: Methodsmentioning

confidence: 99%