Epitaxial growth of a deposited amorphous Si layer formed on hydrogen-terminated Si(001) surfaces by ion beam induced epitaxial crystallization combined with ion beam mixing
Abstract:We have investigated the crystallization process of an amorphous Si layer deposited on hydrogen-terminated Si(001) surfaces by ion beam induced epitaxial crystallization (IBIEC) combined with the ion beam mixing (IBMX) method, aiming at the clarification of the essential IBMX effect on crystallization. In this study, we deposited a 10−15 nm thick amorphous Si layer on clean and two kinds of H-terminated Si(001) surfaces of dihydride (DH) and monohydride (MH), and then carried out the IBMX by 10-keV Si + ion ir… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.