Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing

Pereira, S.; Pereira, E.; Alves, E.; Barradas, N.P.; O’Donnell, K. P.; Liu, C.; Deatcher, C. J.; Watson, I. M.

doi:10.1063/1.1513661

Cited by 15 publications

(7 citation statements)

References 10 publications

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“…Asmeasured 600 nm reflectance data from InGaN/GaN MQW growths published by Lünenbürger et al [19] feature large transients at interfaces in the structure, but these were caused by growth interruptions and temperature ramps affecting the optical thickness of the samples. To illustrate the use of in situ reflectometry to calibrate layer thicknesses in MQW structures, we first discuss results obtained from MQWs with 10 and 18 periods grown at 832 • C. These samples formed part of a set with different numbers of wells, various spectroscopic properties of which have been reported elsewhere [30][31][32][33]. The growth temperature was chosen to give low-temperature PL emission close to a target value of 415 nm.…”

Section: Resultsmentioning

confidence: 99%

In situoptical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures

Deatcher¹,

Liu²,

Pereira³

et al. 2003

Semicond. Sci. Technol.

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Reflectometry using a white light source has been applied to in situ monitoring of metal organic vapour phase epitaxy of InGaN alloy structures on GaN buffer layers. Both InGaN epilayers 60-350 nm in thickness and InGaN/GaN multi-quantum-well (MQW) structures with periods of order 10 nm were studied. The InGaN epilayers have indium mole fractions between 0.105 and 0.240, determined principally by the growth temperature. The standard method of deriving film growth rates from in situ reflectance data is a useful predictor of InGaN epilayer thicknesses, and monitoring at wavelengths of 600 or 800 nm minimizes complications caused by absorption and scattering. For a set of seven InGaN epilayers, the average agreement between reflectance-derived thicknesses and estimates based on Rutherford backscattering is within 5%. Uncertainties in these measurements arise from the significant surface roughness of the films, an imprecise knowledge of optical constants and apparent short-term fluctuations in growth rates. Growth rates obtained from in situ monitoring of InGaN epilayers and GaN grown under the same conditions as MQW barriers can be used to successfully predict layer thicknesses in actual QW structures. We illustrate this methodology by comparing predicted layer thicknesses in 10-and 18-period MQW structures with results from conventional ex situ characterization, using transmission electron microscopy and x-ray diffraction.

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Section: Resultsmentioning

confidence: 99%

In situoptical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures

Deatcher¹,

Liu²,

Pereira³

et al. 2003

Semicond. Sci. Technol.

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“…Rutherford backscattering ͑RBS͒ measurements were used to determine the GaN cap layer thicknesses of the three samples using a 0.2ϫ 0.6 mm 2 , collimated beam of 2.0 MeV 4 He + ions ͑current Ϸ5 nA͒ with the same experimental configuration described in Ref. 8. RBS data were analyzed with the IBA DATAFURNACE NDF code.…”

Section: Methodsmentioning

confidence: 99%

Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures

et al. 2007

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We investigate interactions between Mott-Wannier (MW) and Frenkel excitons in a family of hybrid structures consisting of thin organic (polyfluorene) films placed in close proximity (systematically adjusted by GaN cap layer thickness) to single inorganic [(Ga,In)N∕GaN] quantum wells (QWs). Characterization of the QW structures using Rutherford backscattering spectrometry and atomic force microscopy allows direct measurement of the thickness and the morphology of the GaN cap layers. Time-resolved photoluminescence experiments in the 8–75 K temperature range confirm our earlier demonstration that nonradiative energy transfer can occur between inorganic and organic semiconductors. We assign the transfer mechanism to resonant Förster (dipole-dipole) coupling between MW exciton energy donors and Frenkel exciton energy acceptors and at 15 K we find transfer efficiencies of up to 43%. The dependence of the energy transfer rate on the distance R between the inorganic QW donor dipole and organic film acceptor dipole indicates that a plane-plane interaction, characterized by a 1∕R2 variation, best describes the situation found in our structures

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“…But, the depth resolution of conventional RBS is typically 5-10 nm which is larger than the thickness of the InGaN well, even by grazing incident. In the work of Perira et al [8], only the compositions of the first three InGaN well layers can be determined. Till now, no satisfied method is reported to determine the chemical composition in InGaN/GaN MQWs.…”

Section: Introductionmentioning

confidence: 99%

An approach to determine the chemical composition in InGaN/GaN multiple quantum wells

Zhou

Hou

et al. 2004

Journal of Crystal Growth

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Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing

Abstract: High precision determination of the elastic strain of InGaN/GaN multiple quantum wells

Cited by 15 publications

References 10 publications

In situoptical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures

In situoptical reflectometry applied to growth of indium gallium nitride epilayers and multi-quantum well structures

Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures

An approach to determine the chemical composition in InGaN/GaN multiple quantum wells

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