An approach to determine the chemical composition in InGaN/GaN multiple quantum wells

Zhou, Shengqiang; Wu, MF; Hou, Lei; Yao, Shuo; Ma, He; Nie, Rui; Tong, Yuzhen; Zhi‐Jian, Yang; Yu, Tongjun; Zhang, G.Y.

doi:10.1016/j.jcrysgro.2003.11.046

Cited by 20 publications

(11 citation statements)

References 15 publications

(13 reference statements)

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“…28 Hence, these observed optical bandgap values differ from reported electronic bandgap values of E g SL-MoS 2 ¼ 2.15 eV and E g GaN ¼ 3.45 eV by their respective exciton binding energy (E b ) values of %0.220 eV and %0.023 eV in the literature. 19,29,30 High-resolution XPS measurements are direct, most reliable, and extensively employed to determine the valence band offset (VBO) of a heterojunction interface. In order to evaluate VBO at GaN/SL-MoS 2 heterointerface, the energy difference between the Ga and Mo core levels from the GaN/ SL-MoS 2 heterojunction sample and the energy of core levels relative to the respective valence band maximum of the GaN epilayer and SL-MoS 2 samples need to be acquired.…”

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confidence: 99%

Determination of band offsets at GaN/single-layer MoS2 heterojunction

Tangi

Mishra

et al. 2016

Applied Physics Letters

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We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E12g and A1g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.

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confidence: 99%

Determination of band offsets at GaN/single-layer MoS2 heterojunction

Tangi

Mishra

et al. 2016

Applied Physics Letters

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“…1. The Vegard's law [21] along with XRD was employed by Chen et al [22] and Zhou et al [23] to determine the In content of In x Ga 1−x N. In the present study, In contents of the In x Ga 1−x N thin films corresponding to growth temperatures of 790 • C, 760 • C, and 730 • C were 25%, 30%, and 34%, respectively. From the figure, broad InGaN peaks were due to the combined results of alloying, finite domain size effects, and inhomogeneous material [24].…”

Section: Crystallographic Characterizationsmentioning

confidence: 53%

Morphological, structural, and mechanical characterizations of InGaN thin films deposited by MOCVD

Yang

Lai

Yang

et al. 2008

Journal of Alloys and Compounds

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“…So, it indicates the high crystalline qualities and good interfaces of MQW in these LEDs. Besides, we calculated the average lattice constants c and a of InGaN/GaN MQW from HRXRD spectra by the following equation [12]. …”

Section: Contributedmentioning

confidence: 99%

Effect of period of the electron emitter MQW structure on the improvement of characteristics in nitride‐based LEDs

Chen

Lin

et al. 2010

Phys. Status Solidi (c)

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The effect of period of electron emitter multiple‐quantum well (EE‐MQW) structure on the structural, electrical, and optical characteristics of nitride‐based light‐emitting diodes (LEDs) were investigated. From the lattice constant results of InGaN/GaN multiple‐quantum well (MQW) by the high resolution X‐ray diffraction, the compressive strain of InGaN/GaN MQW could be released gradually when the period of EE‐MQW structure increases. Therefore, the leakage current reduces and the ESD endurance ability enhances with increasing period of EE‐MQW structure. On the other hand, the electron injection efficiency will also be improved by inserting EE‐MQW structure. When the period of EE‐MQW structure increases, the forward voltage and series resistance both decrease. Due to the improved electron injection efficiency and crystalline quality, the luminance intensity increases with increasing period of EE‐MQW structure. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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An approach to determine the chemical composition in InGaN/GaN multiple quantum wells

Cited by 20 publications

References 15 publications

Determination of band offsets at GaN/single-layer MoS2 heterojunction

Determination of band offsets at GaN/single-layer MoS2 heterojunction

Morphological, structural, and mechanical characterizations of InGaN thin films deposited by MOCVD

Effect of period of the electron emitter MQW structure on the improvement of characteristics in nitride‐based LEDs

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