Depth profiles of metal ions implanted in dielectrics at low energies

Степанов, А. Л.; Жихарев, В. А.; Хайбуллин, И. Б.

doi:10.1134/1.1366008

Cited by 12 publications

(7 citation statements)

References 9 publications

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“…All spectra demonstrate characteristic absorption band with maximum at around 400 nm. This location of the band on the wavelength scale is typical for plasmon resonance of Ag NPs [25]. One can see that the fluence increase leads to (i) the increase of absorption intensity, (ii) gradual shift of the absorption maximum towards longer wavelengths and (iii) broadening of the absorption band at the highest fluence.…”

Section: Resultsmentioning

confidence: 94%

“…Consecutive embedding of metal to very high concentration by implantation into glass matrix can lead not only to the growth of already formed NPs but also to the efficient formation of new nucleation sites for NPs due to the introduced radiation defects. This situation typically causes quite broad distribution of the synthesised NPs in size [25]. However, we do not exclude a possibility that competition of several phenomena related to nucleation of NPs, their growth and formation of radiation damage can cause fluctuations of size dispersion for certain fluencies.…”

Section: Discussionmentioning

confidence: 95%

“…4 can be explained as a decrease of mean size of the Ag NPs [25]. On the other hand, the broadening of the longwavelength part of the band is probably related to the increase of fraction of larger particles in the total size distribution.…”

Section: Discussionmentioning

confidence: 97%

See 2 more Smart Citations

Optical and AFM study of ion-synthesised silver nanoparticles in thin surface layers of SiO2 glass

Popok¹,

Gromov²,

Нуждин³

et al. 2010

Journal of Non-Crystalline Solids

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Section: Resultsmentioning

confidence: 94%

Section: Discussionmentioning

confidence: 95%

See 1 more Smart Citation

Optical and AFM study of ion-synthesised silver nanoparticles in thin surface layers of SiO2 glass

Popok¹,

Gromov²,

Нуждин³

et al. 2010

Journal of Non-Crystalline Solids

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“…The effect of metal-ion implantation on the composition and properties of semiconductor and dielectric films is well studied at present [1][2][3][4]. In particular, in the case of Si after annealing the formation of nanocrystalline phases (at a dose D ≤ 10 15 ion cm -2 ) and МеSi 2 type nanofilms (at D ≥ 10 16 ion cm -2 ) was detected.…”

Section: Introductionmentioning

confidence: 99%

Effect of Co+-ion implantation on the composition and properties of free Si–Cu nanofilm structures

Исаханов

Kodirov

Halmatov

et al. 2017

J. Synch. Investig.

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“…Results and Discussion. The modeling of the profiles of the depth-distribution of implanted silver by means of the DYNA computer algorithm [12], taking into account the dynamic change in the phase composition of the target and the surface sputtering, has shown that in the near-surface implanted glass layer Ag atoms are accumulated and the maximum of the profile of the depth-distribution of the metal concentration is shifted to the sample surface with increasing dose. Already at doses of ,10 16 cm −2 the silver concentration maximum is at a depth of only ,5-10 nm and the concentration decreases monotonically into the sample depth.…”

mentioning

confidence: 99%

Synthesis of Silver Nanoparticles by the Ion Implantation Method and Investigation of their Optical Properties

2005

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UDC 543.42We have investigated the process of metal nanoparticle (NP) synthesis in SiO 2 by implanting Ag + ions with an energy of 30 keV depending on the dose ((2-8)⋅10 16 cm −2 ) and the ionic current density (4-15 µA/cm 2 ). Analysis of the composite materials formed was performed with the use of optical spectroscopy and atomicforce microscopy (AFM). The NPs synthesized in the glass demonstrate a characteristic absorption line associated with the surface plasma resonance effect. A correlation of the spectral shift of the lines caused by a change in the NP size with the diameter of the hemispherical asperities on the SiO 2 surface registered by the AFM method has been revealed. It has been found that for the case of a fixed current density in the ion beam the silver NP sizes remain practically unaltered with increasing ion dose up to a certain value (6⋅10 16 cm −2 ), and only an increase in the concentration of NPs is observed thereby. However, a further increase in the dose causes a decrease in both the NP density and size. On the other hand, at a fixed high dose an increase in the ionic current density leads to a gradual enlargement of the NPs. We have considered the mechanisms explaining the change in the NP sizes with increasing dose and ionic current density and evaluated the possibilities of carrying out controlled synthesis by varying the implantation conditions. Introduction. The last few years have seen an ever-growing interest in ion implantation (II) as a method for synthesizing metal NPs in the bulk of dielectric materials due to the use of metal/dielectric composites for constructing elements with unique optical properties [1-3]. The interest in the optical characteristics of nanostructured composites is explained by the prospects of creating, on their basis, plasmon-polariton waveguides [1] and switches with ultrashort response times [4], as well as laser radiation intensity limiters [5,6]. Most of the investigations are devoted to the gold, silver, and copper NPs implanted in various dielectric matrices and exhibiting an intensive response in the visible spectral range at wavelengths characteristic of the resonance collective excitation of conduction electrons in metal NPs, as in the case of surface plasma resonance (SPR) [2]. The interest in the NPs of metals is also due to the active studies of the ways of increasing the sensitivity of molecular spectroscopy with the use of NPs of noble metals [7].The chief advantages of II in synthesizing NPs compared to such methods as sol-gel, ion exchange, and glassmetal fusion are the possibility of filling the implanted layer practically with any metal beyond the limit of its solubility in a dielectric and the realization of exact control of the concentration of the introduced admixture and the positioning of the ion beam on the sample surface. At the same time, the II has a number of limitations, for example, the nonuniform distribution of implanted metal ions in the depth of the material being implanted (especially in the case of high energies) leading ...

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Depth profiles of metal ions implanted in dielectrics at low energies

Cited by 12 publications

References 9 publications

Optical and AFM study of ion-synthesised silver nanoparticles in thin surface layers of SiO2 glass

Optical and AFM study of ion-synthesised silver nanoparticles in thin surface layers of SiO2 glass

Effect of Co+-ion implantation on the composition and properties of free Si–Cu nanofilm structures

Synthesis of Silver Nanoparticles by the Ion Implantation Method and Investigation of their Optical Properties

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