2015
DOI: 10.1016/j.tsf.2014.10.053
|View full text |Cite
|
Sign up to set email alerts
|

Deposition-rate dependence of orientation growth and crystallization of Ti thin films prepared by magnetron sputtering

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

2
14
0

Year Published

2015
2015
2023
2023

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 34 publications
(16 citation statements)
references
References 20 publications
2
14
0
Order By: Relevance
“…Since, all the processing parameters were kept constant, except that of substrate temperature. The observed increase in size with temperature can be presumed to arise from the enhancement in diffusion co-efficient ( D ) of the evaporated atom over the substrate surface as given by equation 4 30 .where D o represent the macroscopic diffusivity of adatom and assumed to be in the order of 10 −3  cm 2 /s, as proposed by Tsong, T.T. 31 , ΔE is activation energy for diffusion, k is Boltzmann constant, and T is absolute temperature of the substrate.…”
Section: Resultsmentioning
confidence: 99%
“…Since, all the processing parameters were kept constant, except that of substrate temperature. The observed increase in size with temperature can be presumed to arise from the enhancement in diffusion co-efficient ( D ) of the evaporated atom over the substrate surface as given by equation 4 30 .where D o represent the macroscopic diffusivity of adatom and assumed to be in the order of 10 −3  cm 2 /s, as proposed by Tsong, T.T. 31 , ΔE is activation energy for diffusion, k is Boltzmann constant, and T is absolute temperature of the substrate.…”
Section: Resultsmentioning
confidence: 99%
“…There are two main reasons for this phenomenon. Firstly, growth mode of deposition particles is seriously influenced by deposition rate [20]. Higher deposition rate leads to lower horizontal proliferation ability of the deposition particles, then results in the island nucleation and increases the interface and surface roughness [21,22].…”
Section: Afm and Gixrrmentioning
confidence: 99%
“…Fig. 6 (a) deposition rate is regarded as the primary factor to induce the preferred orientation which leads to the difference of interface width among all the multilayer coatings [20,27]. …”
Section: Clear Boundaries Of Both Mo-on-si and Si-on-mo Interfaces Camentioning
confidence: 99%
“…According to Bania et al, 7 only 10 wt% of Mo content is needed to fully stabilize the b phase at room temperature in a quenched Ti-Mo alloy. Ho et al 5 found that the cast binary Ti- (10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) wt% Mo alloys show metastable b-Ti growth, while those with less than 10 wt% Mo content exhibit a martensitic transformation from the b phase to orthorhombic a 00 or hexagonal a 0 phase.…”
Section: Introductionmentioning
confidence: 99%