Deposition rate characteristics for steady state high power impulse magnetron sputtering (HIPIMS) discharges generated with a modulated pulsed power (MPP) generator

Effect of peak target power on the properties of Cr thin films sputtered by HiPIMS in deep oscillation magnetron sputtering (DOMS) mode

“…The n exponent for the DOMS discharge (2.7) is much lower than that for the DCMS discharge and lies well below the minimum value indicated for DCMS. Low values of n indicate that the discharge is already efficiently ionized, voltage increases result only in small amount of increase in the current, and are typical of HiPIMS discharges [22][23][24]. The DCMS like mode of operation observed by Ehiasarian et al [22] for a Cr target sputtered by HiPIMS at 0.4 Pa between 500 and 650 V is not observed in this work as the DOMS discharge did not ignite below 680 V.…”

High Deposition Rate Symmetric Magnet Pack for High Power Pulsed Magnetron Sputtering

“…3 magnetic field profile on the magnetron target surface [8][9][10], plasma impedance [11], plasma instabilities [12] and power supply pulsing parameters [13,14].…”

“…ACCEPTED MANUSCRIPT 11 The next, and most appealing, difference between the TriPack and convectional magnet pack is the deposition rates. The deposition rates from the conventional pack and TriPack were obtained at 13mTorr and 500W average power with Advanced Energy DC, Huettinger HiPIMS and Starfire Impulse HiPIMS power supplies.…”

An investigation of c-HiPIMS discharges during titanium deposition

“…In order to overcome this issue, various research groups are exploring ways to enhance the deposition rate of HiPIMS. Many techniques have been investigated, such as the use of modulated pulsed power (MPP) sputter deposition [14], mid-frequency (MF) superimposition of HiPIMS [10] as well as DCMS / HiPIMS hybrid systems [15].…”

“…ACCEPTED MANUSCRIPT 14 Note that aditional films were grown at 2 Pa, the conditions presented in section 4.1 and also using a total t on time of 200 µs, to ensure that the change of pressure had no effect on film growth. Analysis determined that there were no differences when using higher pressure.…”