Deposition-power-modulated optical and electrical properties of sputtering-derived HfTiOx gate dielectrics

Jin, Peng; He, Gang; Liu, M.; Xiao, D.Q.; Gao, Juan; Chen, X.F.; Zhang, J.W.; Zhang, M.; Sun, Zhaoqi; Liu, Y.M.

doi:10.1016/j.jallcom.2015.07.076

Cited by 12 publications

(10 citation statements)

References 25 publications

(24 reference statements)

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“…It was found that ε r was equal to 24 and 25 for (Hf 0.52 Ti 0.48 )Ox and (Hf 0.29 Ti 0.71 )Ox films, respectively ( Table 2). According to the literature [6,11,18] in mixed HfO 2 and TiO 2 films, it is possible to obtain a material with modified values of the dielectric constant in a wide range, however, the most suitable value of ε r for high-k oxides is in the range from 25 to 35 [9,15]. Jiang and others [6] showed that for films based on a mixture of Hf and Ti oxides with an amorphous phase, the values of ε r were in the range from 29 to 39.…”

Section: Resultsmentioning

confidence: 99%

“…However, the drawback of HfO 2 is its low crystallization temperature of ca. 200 °C [17], resulting in a large leakage current, high oxygen and impurities penetration, and also defect generation which hinders its integration with traditional CMOS processes [5,6,14,[16][17][18][19][20][21][22]. Hafnium dioxide occurs in three polymorphs, including monoclinic, tetragonal and cubic phases [5,15,23].…”

Section: Introductionmentioning

confidence: 99%

“…One of the effective ways of increasing the crystallization temperature is combining HfO 2 with another complementary gate materials, such as titanium dioxide (TiO 2 ) [6]. Based on some references from the last ten years [6,12,13,18,19,[27][28][29][30][31], it can be noted that doping HfO 2 with TiO 2 can lead to receiving a higher dielectric constant and improvement of electrical properties. In turn, TiO 2 is an attractive material due to its very high dielectric constant (ε r ~ 80-110) and high crystallization temperature [6,13,22].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, additional annealing of TiO 2 -anatase at the temperature over 700 °C results in irreversible phase transition to the rutile phase [33][34][35]38]. Besides, it can be noted that Hf and Ti are both 4-valence elements which would restrain the production of oxygen vacancy, thereby reducing the leakage current density of such mixed oxides [11,14,16,18,21]. Recently, mixed oxide thin films based on HfO 2 and TiO 2 have attracted a lot of attention due to their potential application in, e.g.…”

Section: Introductionmentioning

confidence: 99%

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The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Obstarczyk

Kaczmarek

Mazur

et al. 2019

J Mater Sci: Mater Electron

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In this paper a comparison of electrical and optical properties of mixed hafnium-titanium oxides is described. Thin films were deposited with the use of the magnetron co-sputtering method. For further analysis (Hf 0.52 Ti 0.48)Ox and (Hf 0.29 Ti 0.71) Ox coatings, which were amorphous directly after the deposition process, were chosen,. Moreover, post-process annealing was also performed in order to compare the electrical and optical properties of amorphous and nanocrystalline thin films with the same material composition. It was found that the phase transition from amorphous to orthorhombic HfTiO 4 occurred in the case of (Hf 0.52 Ti 0.48)Ox coating at 650 °C. In turn, the phase transition to TiO 2-anatase was observed at the temperature of 600 °C in the case of (Hf 0.29 Ti 0.71)Ox thin film. The leakage current for both amorphous coatings was in the range of 10 −7-10 −8 A/cm 2. After additional annealing and phase transition, the leakage current slightly decreased for (Hf 0.29 Ti 0.71)Ox thin film, while in the case of (Hf 0.52 Ti 0.48)Ox sample the resistance switching effect was observed. The dielectric constant was equal to 24 and 25 for amorphous (Hf 0.52 Ti 0.48)Ox and (Hf 0.29 Ti 0.71)Ox films, respectively. However, after the phase transition it decreased to 15 for (Hf 0.52 Ti 0.48)Ox and increased to 51 for (Hf 0.29 Ti 0.71)Ox film. The results of optical studies showed that amorphous thin films were well transparent in a visible light range with an average transparency of ca. 85%. After the phase transition to HfTiO 4-orthorhombic and TiO 2-anatase, a slight decrease in the transparency level by 3% and a redshift of the cutoff wavelength was observed. Moreover, additional annealing caused small changes of the optical band gap energy, refractive index and extinction coefficient.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Obstarczyk

Kaczmarek

Mazur

et al. 2019

J Mater Sci: Mater Electron

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show abstract

“…In this paper, the structural, surface, optical, and mechanical properties of TiO 2 thin films deposited by two different magnetron sputtering methods (with a continuous gas flow and with a gas impulse) have been compared. Titanium dioxide was selected as a well-known material in electronics and optoelectronics [20][21][22][23]. It is frequently used for the preparation of, for example, optical coatings.…”

Section: Introductionmentioning

confidence: 99%

Comparison of the Physicochemical Properties of TiO2 Thin Films Obtained by Magnetron Sputtering with Continuous and Pulsed Gas Flow

et al. 2018

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In this paper, a comparison of TiO2 thin films prepared by magnetron sputtering with a continuous and pulsed gas flow was presented. Structural, surface, optical, and mechanical properties of deposited titanium dioxide coatings were analyzed with the use of a wide range of measurement techniques. It was found that thin films deposited with a gas impulse had a nanocrystalline rutile structure instead of fibrous-like anatase obtained with a continuous gas flow. TiO2 thin films deposited with both techniques were transparent in the visible wavelength range, however, a much higher refractive index and packing density were observed for coatings deposited by the pulsed gas technique. The application of a gas impulse improved the hardness and scratch resistance of the prepared TiO2 thin films.

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Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method

Atuchin

Lebedev

Korolkov

et al. 2018

J Mater Sci: Mater Electron

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Deposition-power-modulated optical and electrical properties of sputtering-derived HfTiOx gate dielectrics

Cited by 12 publications

References 25 publications

The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Comparison of the Physicochemical Properties of TiO2 Thin Films Obtained by Magnetron Sputtering with Continuous and Pulsed Gas Flow

Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method

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