Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors

Black, Kate; Aspinall, Helen C.; Jones, Anthony; Przybylak, Katarzyna R.; Bacsa, John; Chalker, Paul R.; Taylor, Stephen; Zhao, Ce Zhou; Elliott, Simon D.; Zydor, Aleksandra; Heys, Peter N.

doi:10.1039/b807205a

Cited by 42 publications

(30 citation statements)

References 72 publications

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“…[54] The newest innovation in the C P -type ALD precursors for HfO 2 and ZrO 2 film growth is the introduction of ansa-metallocenes, in which two cyclopentadienyl rings are bridged to each other via an alkyl chain. [57] This report suggests further improvements in thermal stability. As described above, the C P -precursors offer high thermal stability but moderate growth rate and an enhanced tendency to deposit a mixture of ZrO 2 and HfO 2 phases.…”

Section: Reviewmentioning

confidence: 78%

Atomic Layer Deposition of High‐k Oxides of the Group 4 Metals for Memory Applications

et al. 2009

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This paper reviews several high‐k ALD processes potentially applicable to the production of capacitors, concentrating on very recent developments. A list of the dielectric materials under investigation consists of the oxides of several metals, including the Group 4 (Ti, Zr, Hf) elements. The binary oxides of Group 4 metals, as well as their mixtures with other oxides, doped hosts, or multi‐layers in the form of nano‐laminates are of interest.Several examples of our recent results are shown, including possible ALD routes to materials not previously grown, as well as advances in process development.

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Section: Reviewmentioning

confidence: 78%

Atomic Layer Deposition of High‐k Oxides of the Group 4 Metals for Memory Applications

et al. 2009

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“…Calculations by Zydor and Elliott show that intramolecular -H transfer in Zr and Hf precursors M(MeCp) 2 (Me) 2 accounts for experimentally-observed decomposition and can be avoided by altering the ligands or increasing the electrophilicity of the metal [106]. The effect on electrophilicity is also calculated for related precursors with bridged cyclopentadienyl ligands [66]. Using DFT corrected for dispersion, the fragmentation modes of a Cu(I) guanidinate precursor are computed by Coyle et al to be carbodiimide deinsertion and -H elimination, with the latter pathway agreeing with results from mass spectrometry and IR spectroscopy [56].…”

Section: Thermal Stability Of Ald Precursorsmentioning

confidence: 98%

Atomic-scale simulation of ALD chemistry

Elliott¹

2012

Semicond. Sci. Technol.

104

108

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“…For single crystals of these ternary oxides, dielectric constants of 20-35 depend on the lattice direction. An optical band gap larger than 5 eV is obtained for thin amorphous films grown by PLD [40]. In contact with silicon the amorphous phase of LaScO 3 14 ISRN Nanotechnology Intensity (a.u.…”

Section: Rare Earth Gate Oxide Dielectricsmentioning

confidence: 99%

“…For the thin films of ZrO 2 and HfO 2 [40] which have been deposited by liquid injection MOCVD and ALD using a range of ansa-metallocene precursors, XRD analysis shows that the HfO 2 films deposited by MOCVD are amorphous, whereas the ZrO 2 films deposited by MOCVD were in the tetragonal phase. AES shows that residual carbon is present in all the films and that the films grown by MOCVD contained more carbon (2.4-17.0 at.%) than the films grown by ALD (1.8-2.8 at.%).…”

Section: Hf-based Gate Oxide Dielectricsmentioning

confidence: 99%

Advanced CMOS Gate Stack: Present Research Progress

Zhao

Werner

Taylor

et al. 2012

ISRN Nanotechnology

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The decreasing sizes in complementary metal oxide semiconductor (CMOS) transistor technology require the replacement of SiO 2 with gate dielectrics that have a high dielectric constant (high-k). When the SiO 2 gate thickness is reduced below 1.4 nm, electron tunneling effects and high leakage currents occur which present serious obstacles for device reliability. In recent years, various alternative gate dielectrics have been researched. Following the introduction of HfO 2 into the 45 nm process by Intel in 2007, the screening and selection of high-k gate stacks, understanding their properties, and their integration into CMOS technology have been a very active research area. This paper reviews the progress and efforts made in the recent years for high-k dielectrics, which can be potentially integrated into 22 nm (and beyond) technology nodes. Our work includes deposition techniques, physical characterization methods at the atomic scale, and device reliability as the focus. For most of the materials discussed here, structural and physical properties, dielectric relaxation issues, and projections towards future applications are also discussed.

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Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors

Cited by 42 publications

References 72 publications

Atomic Layer Deposition of High‐k Oxides of the Group 4 Metals for Memory Applications

Atomic Layer Deposition of High‐k Oxides of the Group 4 Metals for Memory Applications

Atomic-scale simulation of ALD chemistry

Advanced CMOS Gate Stack: Present Research Progress

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