Deposition of (Zn, Mn)2SiO4 for plasma display panels using charged liquid cluster beam

Cich, Michael Joseph; Kim, Kyekyoon; Choi, H. K.; Hwang, Sun-Tae

doi:10.1063/1.122396

Cited by 64 publications

(25 citation statements)

References 6 publications

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“…Through these methods, it supplies a uniform large-area (20 cm 2 ) electrode with thin film and an industrial apparatus. Cich et al [102] produced a plasma display active layer on Si(111) substrate. The spraying process took place in an atmosphere of nitrogen and ethanol.…”

Section: Figure 20mentioning

confidence: 99%

Inkjet printing for flexible electronics: Materials, processes and equipments

et al. 2010

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Inkjet printing, known as digital writing technique, can directly deposit functional materials to form pattern onto substrate. This paper provides an overview of inkjet printing technologies for flexible electronics. Firstly, we highlight materials challenges in implementing flexible devices into practical application, especially for inkjet printing process. Then the micro/nano-patterning technologies of inkjet printing are discussed, including conventional inkjet printing techniques and electrohydrodynamic printing techniques. Thirdly, the related equipments on inkjet printing are shown. Finally, challenges for its future development are also discussed. The main purpose of the work is to condense the basic knowledge and highlight the challenges associated with the burgeoning and exciting field of inkjet printing for flexible electronics.flexible electronics, nanomanufacturing, organic thin film transistor, micro/nano-patterning, inkjet printing, electrohydynamics, roll-to-roll Citation: Overview of flexible electronics technologyFlexible electronics, also known as printable/organic electronics, represent a technology for building electronic circuits by depositing electronic devices onto flexible substrates. Realization of flexible electronics with performance equal to conventional microelectronics built on brittle semiconductor wafers, but in high mobilities, optical transparency, light-weight, stretchable/bendable formats and easy to print rapidly over large areas would enable many new applications [1-4] not satisfied by a traditional rigid electronics. The applications vary from medicine and biology to energy technology and space science [1,2], such as flexible display [4,5], thin film solar cell [6,7], large area sensors and actuators [8,9], shown in Figure 1. These applications are based on thin film transistors (TFTs) which have strong materials and processes contents. Flexible electronics *Corresponding authors (have open boundaries that move with its development and applications and is a highly interdisciplinary field. As a result, there are considerable opportunities for innovation and basic scientific research into new types of electronic materials, processes and equipments.The flexibility, a critical issue in flexible electronics, is one of the most important differences from traditional microelectronics. Polymer organics and inorganic materials are the two kind of materials adopted in flexible electronics. The polymer organics are generally believed to be well suited for these applications and naturally compatible with polymeric substrates. However, the electrical properties is not ideal when devices are fabricated with polymer organics. This leads to interest in the possibility of inorganic based flexible electronics [10]. It is a challenge to design a bendable and stretchable electronics based on inorganic materials due to their small fracture strain. The most basic realization is thin films of the inorganics are adopted as semiconductors, conductors and/or insulators on substrates to mini-

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Section: Figure 20mentioning

confidence: 99%

Inkjet printing for flexible electronics: Materials, processes and equipments

et al. 2010

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“…The decay time, the width of the CT band and efficiency are modified by co-dopants [7][8][9]. In recent years, Zn 2 SiO 4 : Mn has been found to be suitable for many more applications such as thin film electroluminescent (TFEL) devices [10,11], plasma display panels (PDP) [12,13], medical imaging detector for low-voltage radiography and fluoroscopy [14,15], etc. Synthesis of the phosphor was described in detail as early as 1928 [16].…”

Section: Introductionmentioning

confidence: 99%

Combustion Synthesis of the Zn2SiO4:Mn Phosphor

Bhatkar

Omanwar

Moharil

2002

phys. stat. sol. (a)

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“…7 ). Because of its unique luminescent properties, wide energy band gap (5.5 eV), and excellent chemical stability, Zn 2 SiO 4 is candidate for flat panel displays, [8][9][10][11][12][13] X-ray or nuclear medical image receptors, X-ray to light converters coupled to optical detectors, 14 etc. Zn 2 SiO 4 forms readily at the interface of ZnO/Si heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and optical properties of ZnSiO3 and Zn2SiO4

Karazhanov

Ravindran

Fjellvåg

et al. 2009

Journal of Applied Physics

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The electronic structure and optical properties of orthorhombic, monoclinic, and rhombohedral (corundum type) modifications of ZnSiO 3 , and of rhombohedral, tetragonal, and cubic (spinel type) modifications of Zn 2 SiO 4 have been studied using ab initio density functional theory calculations. The calculated fundamental band gaps for the different polymorphs and compounds are in the range 2.22 -4.18 eV. The lowest conduction band is well dispersive similar to that found for transparent conducting oxides such as ZnO. This band is mainly contributed by Zn 4s electrons. The carrier effective masses were calculated and compared with those for ZnO.The topmost valence band is much less dispersive and contributed by O 2p and Zn 3d electrons.From the analysis of charge-density, charges residing in each sites, and electron localization function it is found that ionic bonding is mainly ruling in these compounds. The calculated optical dielectric tensors show that the optical properties of ZnSiO 3 and Zn 2 SiO 4 are almost isotropic in the visible part of the solar spectra and depend negligibly on the crystal structure. Within the 0-4 eV photon energy range the calculated magnitude of the absorption coefficient, reflectivity, refractive index, and extinction coefficient are smaller than 10 3 cm -1 , 0.15, 2.2, and 0.3, respectively for all 2 the ZnSiO 3 and Zn 2 SiO 4 phases considered in this work. This suggests that zinc silicates can be used as antireflection coatings. 71.15.-m; 71.22.+i PACS:

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Deposition of (Zn, Mn)2SiO4 for plasma display panels using charged liquid cluster beam

Cited by 64 publications

References 6 publications

Inkjet printing for flexible electronics: Materials, processes and equipments

Inkjet printing for flexible electronics: Materials, processes and equipments

Combustion Synthesis of the Zn2SiO4:Mn Phosphor

Electronic structure and optical properties of ZnSiO3 and Zn2SiO4

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