Deposition of undoped and H doped WOx (x≤3) films in a hot-wire atomic layer deposition system without the use of tungsten precursors

Kostis, Ioannis; Vasilopoulou, Maria; Papadimitropoulos, G.; Stathopoulos, Nikolaos; Savaidis, Stylianos P.; Davazoglou, Dimitris

doi:10.1016/j.surfcoat.2013.06.021

Cited by 17 publications

(13 citation statements)

References 25 publications

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“…The deposition system used in this study was described before [11,14]. It consisted of a stainless steel reactor in which the sample was positioned on an aluminum susceptor 2 cm below a tungsten filament heated by an (AC) current lead by two Cu leads.…”

Section: Metal Oxides Depositionmentioning

confidence: 99%

“…The ALD valves and the associated gas lines were heated allowing for the injection of a variety of precursors into the reactor. However, in this work the filament played the role of the precursor [11], the deposition ambient was set by a gas flow (either of N 2 or FG) and H 2 was injected during deposition through an ALD valve. For the deposition, after loading the substrate, the system was evacuated down to 10 −2 Torr.…”

Section: Metal Oxides Depositionmentioning

confidence: 99%

“…As shown previously [9], in stoichiometric forms (x = 3) these oxide films, deposited by heating a filament of the corresponding metal at pressures of 0.1 Torr in environments of nitrogen, exhibit a band gap of approximately 3.0 eV, which is free of states. By introducing hydrogen in the deposition environment the oxygen stoichiometry of these layers decreases and a band is created deep in the gap (intermediate band, IB) at approximately 2 eV below the edge of the conduction band (CB) [10][11][12][13]. Finally, by injecting hydrogen pulses during deposition using an atomic layer deposition (ALD) valve, atomic hydrogen is formed in the deposition chamber that dopes films creating another IB, shallower than before, at approximately 1 eV below the CB [12,13].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Engineering of the energetic structure of the anode of organic photovoltaic devices utilizing hot-wire deposited transition metal oxide layers

Vasilopoulou

Stathopoulos

Savaidis

et al. 2015

Applied Surface Science

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Section: Metal Oxides Depositionmentioning

confidence: 99%

Section: Metal Oxides Depositionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Engineering of the energetic structure of the anode of organic photovoltaic devices utilizing hot-wire deposited transition metal oxide layers

Vasilopoulou

Stathopoulos

Savaidis

et al. 2015

Applied Surface Science

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“…The few available works are on HWALD of Co(W) films , where ammonia gas is dissociated upon hot‐wire. Kostis et al introduced oxygen gas to oxidize hot tungsten filament and form volatile tungsten oxides. The oxides were further transported to the substrate, resulting in WO x deposition.…”

Section: Introductionmentioning

confidence: 99%

Hot-wire assisted ALD of tungsten films:In-situstudy of the interplay between CVD, etching, and ALD modes

Yang

Aarnink

Kovalgin

et al. 2015

Phys. Status Solidi A

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In this work, we investigated an approach of hot‐wire assisted ALD (HWALD), utilizing a hot (up to 2000 °C) tungsten (W) wire. Tungsten films were deposited by this method using alternating pulses of WF6 gas and atomic hydrogen (at‐H). The latter was generated by catalytic dissociation of molecular hydrogen (H2) upon the hot‐wire. The W films were grown on a 100‐nm thick thermal SiO2. The growth process was monitored in real time by an in‐situ spectroscopic ellipsometer (SE). The real‐time SE monitoring revealed the coexistence of three processes: CVD, etching, and ALD of the W film. WF6 could back‐stream diffuse to the hot‐wire, resulting in WF6 decomposition and generation of a flux of fluorine (F). The latter caused etching of the grown W film and the filament, and provided extra tungsten supply, which might cause CVD. Higher pressure and higher carrier gas flow rate were found to largely suppress the back‐stream diffusion of WF6, which efficiently limited CVD. By controlling the dose of WF6 and process pressure, the etching had also been minimized. X‐ray photoelectron spectroscopy of optimized HWALD grown W revealed 99 at% of W; concentrations of oxygen and fluorine were lower than 1%, below the detection limit.

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“…Kostis et al [47] introduced oxygen gas to oxidize hot tungsten filament and form volatile tungsten oxides (WOx). The oxides were further transported to the substrate, resulting in WOx deposition.…”

Section: From Thermal To Radical Enhanced Aldmentioning

confidence: 99%

Hot-wire assisted atomic layer deposition of tungsten films

Yang¹

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Deposition of undoped and H doped WOx (x≤3) films in a hot-wire atomic layer deposition system without the use of tungsten precursors

Cited by 17 publications

References 25 publications

Engineering of the energetic structure of the anode of organic photovoltaic devices utilizing hot-wire deposited transition metal oxide layers

Engineering of the energetic structure of the anode of organic photovoltaic devices utilizing hot-wire deposited transition metal oxide layers

Hot-wire assisted ALD of tungsten films:In-situstudy of the interplay between CVD, etching, and ALD modes

Hot-wire assisted atomic layer deposition of tungsten films

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