1995
DOI: 10.1016/0169-4332(95)00151-4
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Deposition of titanium nitride/tungsten layers for application in vertically integrated circuits technology

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Cited by 16 publications
(3 citation statements)
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“…W chemical vapor deposition ͑CVD͒ from WF 6 -the process of choice for filling high aspect ratio holes in ultralarge-scale integrated ͑ULSI͒ circuits [1][2][3][4][5][6] -requires the use of conformal TiN/Ti bilayers. TiN is used as a diffusion barrier to prevent WF 6 reaction with underlying layers, [7][8][9][10] and Ti getters interfacial oxygen from the surface of the underlayers ͑e.g., Al͒ to reduce via resistance. On substrates such as Si and SiO 2 , Ti also serves as an adhesion promoter by reacting to form a thin TiSi 2 layer.…”
Section: Introductionmentioning
confidence: 99%
“…W chemical vapor deposition ͑CVD͒ from WF 6 -the process of choice for filling high aspect ratio holes in ultralarge-scale integrated ͑ULSI͒ circuits [1][2][3][4][5][6] -requires the use of conformal TiN/Ti bilayers. TiN is used as a diffusion barrier to prevent WF 6 reaction with underlying layers, [7][8][9][10] and Ti getters interfacial oxygen from the surface of the underlayers ͑e.g., Al͒ to reduce via resistance. On substrates such as Si and SiO 2 , Ti also serves as an adhesion promoter by reacting to form a thin TiSi 2 layer.…”
Section: Introductionmentioning
confidence: 99%
“…If the adhesion is strong, then base growth will be the dominant mechanism, else the mechanism will be tip growth where the catalyst nanoparticles are lifted during the growth process. TiN x is widely used as an adhesion and barrier layer for metals [11], hence its strong interactions with the metal catalyst influences the base growth mechanism observed. Also, nanotubes formed by tip growth has typically larger diameter compared to that of base growth.…”
Section: Mems Nano and Smart Systemsmentioning
confidence: 99%
“…Metal is deposited inside a trench-type pattern mold having a narrow width and a deep depth to form interconnections with a large cross-sectional area in a limited space. Tungsten shows good gap-filling characteristics due to its high step coverage obtained through chemical vapor deposition; thus, it has been used to fill the inside of a deep mold and make vertical structures with high aspect ratios, such as via and plug structures [4]- [7]. Tungsten is commonly used as an interconnection metal for highly integrated patterns due to its advantage of being able to fill the inside of a deep trench mold with a narrow width and pitch.…”
Section: Introductionmentioning
confidence: 99%