Deposition of thin film of titanium on ceramic substrate using the discharge for hollow cathode for Al2O3/Al2O3 indirect brazing

Abstract

Thin films of titanium were deposited onto Al 2 O 3 substrate by hollow cathode discharge method for the formation of a ceramic-ceramic joint using indirect brazing method. An advantage of using this technique is that a relatively small amount of titanium is required for the metallization of the ceramic surface when compared with other conventional methods. Rapidly solidified brazing filler of Cu 49 Ag 45 Ce 6 in the form of ribbons was used. The thickness of deposited titanium layer and the brazing temperature/time were varied. The quality of the brazed joint was evaluated through the three point bending flexural tests. The brazed joints presented high flexural resistance values up to 176 MPa showing the efficiency of the technique.

Estudo De Deposição De Filmes Finos Em Plasmas De Ar/Ar-H2 Em Regiões De Pós-Descarga De Catodo Oco

“…Os gases utilizados nesse trabalho foram introduzidos no reator por dois caminhos, o primeiro passando pelo centro do cátodo oco (8). O segundo caminho utilizado foi no flange inferior (9). Todos os fluxos dos gases foram controlados por fluxímetro digital da MKS de quatro canais (modelo 247).…”

“…Pela variação dos parâmetros do plasma estas técnicas oferecem a possibilidade de variar as propriedades dos filmes (Marinho et al, 2009). Pós-descarga de catodo oco vem tornando-se uma promissora candidata como fonte de sputtering (pulverização catódica) devido a sua simplicidade de elaboração de projeto, operação, bom controle dos parâmetros e baixo custo (G., 2005).…”

Performance Analysis of Ti-Doped In2O3 Thin Films Prepared by Various Doping Concentrations Using RF Magnetron Sputtering for Light-Emitting Device

“…To address these problems, a new alternative material to ITO was needed. In this sense, thin-film materials were developed with numerous channel materials incorporated with impurity doping such as Zn-doped In 2 O 3 [9], Mo-doped In 2 O 3 [8,9], or Ti-In 2 O 3 [10][11][12] that are found to be an ITO alternative for the transparent conducting application [13]. Titanium-doped indium oxide (ITiO) was considered the best choice because ITiO has a relatively low sheet resistance and demonstrates a high transmission in the near infrared (NIR), apart from its high mobility [10].…”