Metallic silver films are deposited by radical-enhanced atomic layer deposition (REALD) using (2,2-dimethylpropionato)silver(I)triethylphosphine and hydrogen radicals. The silver precursor used is synthesized in-house, and characterized using CHN elemental analysis, infrared (IR) spectroscopy, nuclear magnetic resonance (NMR), mass spectrometry (MS), and thermogravimetric analysis/single differential thermal analysis (TGA/SDTA). The crystal structure of Ag(O 2 C t Bu)(PEt 3 ) is also solved. Trimeric units are revealed as the building blocks. The hydrogen radicals are produced by dissociating molecular hydrogen with a microwave plasma discharge. The evaporation temperature of the silver precursor is 125°C, and the film deposition temperature is 140°C. The deposition is successful on glass and silicon, and the films are conformal. The saturated growth rate is 0.12 nm per cycle, with a 3 s silver precursor pulse and 5 s hydrogen radical pulse time. The overall cycle time is 14 s. The films are polycrystalline and are visually mirror-like. The films contain 10 at.-% oxygen, 4.0 at.-% phosphorous, 1.0 at.-% carbon, and 5.0 at.-% hydrogen as impurities. Nevertheless, the films exhibit low resistivity, only 6 lX cm for a 40 nm thick film.