Deposition of Ru Thin Films from Supercritical Carbon Dioxide Fluids

Abstract

A high confinement plasma (including core plasma and edge plasma) produced by using lower hybrid current drive (LHCD) has been obtained on the HT-7 superconducting tokamak. An internal transport barrier in the core plasma was formed. The energy confinement time increases from 14.6 ms (Ohmic (OH) phase) to 24.5 ms (LHCD phase), which is close to the value calculated using the ITER93ELM free scaling law. The confinement factor H 89 increases from 0.78 (OH phase) to 1.42 (LHCD phase). The experimental results were in good agreement with the simulations calculated with a ray tracing code and a two-dimensional Fokker-Planck equation. The edge plasma characteristics around the last closed flux surface were investigated using Langmuir probes. Turbulence and transport of the edge plasma were suppressed greatly by the lower hybrid wave. Studies show that the enhanced confinement plasma may be ascribed to a shear flow resulting from the shear of the radial electric field.

Cu Wiring Fabrication by Supercritical Fluid Deposition for MEMS Devices

“…The byproduct Hhfac (hexafluoroacetylacetone) has a higher solubility in supercritical CO 2 , which means that this reaction preferentially proceeds to the right, the deposition temperature is lower than for the same reaction in the gas, and the deposited Cu contains less impurities. Other noble and near-noble metals such as Ni [21,22], Co [21], Pd [23], Pt [24], and Ru [25] can be deposited using similar chemistry. Typical temperatures and pressures for Cu deposition are 50-250°C, and 10-20 MPa.…”

“…Oxides can also be deposited in a similar manner through thermochemical reactions in the fluid that dissolve the precursors. RuOx [25], TiO 2 [26], SiO 2 [27], ZnO [28], Al 2 O 3 [29], Y 2 O 3 [30], Bi 2 O 3 [31], SrO [32], and other oxides and mixed oxides that are deposited by CVD can also be deposited by SFCD. Figure 5 illustrates the principles of SFCD for high-aspect-ratio feature filling, and this will be discussed below.…”

Ruthenium complexes as precursors for chemical vapor-deposition (CVD)

“…However recently a large number of ruthenium complexes like ruthenium alkoxides, ruthenium alkyls, ruthenium amidinates, ruthenium diketonates, ruthenium carbonyls and others were exploited as precursor complexes. 1,53,[81][82][83][84] Thus, it is interesting to classify such complexes in terms of the nature of bonding of organic ligands formed by ruthenium and is described as follows: 2 were exploited as CVD precursors. 87 The molecular structures of some important ruthenium carbonyls are depicted in Fig.…”

Supercritical CO2 reactor for wafer-scale thin film deposition: reactor concept, numerical results, and Cu depositio.

“…This technique is called supercritical fluid chemical deposition, frequently abbreviated SFCD or SCFD. Metal deposition using this technique has been reported for Cu [1][2][3], Ni [2][3][4], Pd [2,5,6], Pt [5,7,8], Rh [5], Ru [9,10], Au [5], and Ag [11,12]. To deposit a metal, a precursor (an organometallic compound) is dissolved in scCO 2 along with hydrogen or another reducing agent [12] if necessary, and the metal is deposited through a thermal reaction.…”