Deposition Of PZT Thin Films With (001), (110), and (111) Crystallographic Orientations And Their transverse Piezoelectric Characteristics

Ambika, D.; Kumar, V.; Tomioka, Kohei; Kanno, Isaku

doi:10.5185/amlett.2011.7281

Cited by 34 publications

(17 citation statements)

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“…These feature peaks are still observable after the deposition of Pd/Ni/Pd films. At 2θ¼ 38.2°, there is the PZT (111) peak, which is consistent with the literature [39]. Because the Pd/Ni/Pd/mica did not fully cover the PZT substrate and some PZT area was at the surface top, the PZT(111) peak was observed in our measurement.…”

Section: Experimental Methodssupporting

confidence: 92%

Modulation of magnetic coercivity in Ni thin films by reversible control of strain

Lin

Huang

Yue

et al. 2015

Journal of Magnetism and Magnetic Materials

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Section: Experimental Methodssupporting

confidence: 92%

Modulation of magnetic coercivity in Ni thin films by reversible control of strain

Lin

Huang

Yue

et al. 2015

Journal of Magnetism and Magnetic Materials

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“…13 In other words, the polarization and pyroelectric vector components are along [111] and therefore, lower than the maximum allowable values obtained from [001]. 13,24,28,32,40,[69][70][71] In order to assess the contribution of [111]-aligned dipoles in our analysis, as a first-order approximation, the calculated polarization values and pyroelectric coefficients can be normalized by 1/ ffiffi ffi 3 p to account for geometrical considerations. 32,72 This simple assumption decreases the computed pyroelectric coefficient to $0.02 lC cm À2 C À1 in agreement with the experimental findings of (111)-textured films listed in Table I.…”

Section: Resultsmentioning

confidence: 99%

Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses

Kesim

Zhang

Trolier-McKinstry

et al. 2013

Journal of Applied Physics

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Author(s)Kesim, M. T.; Zhang, J.; Trolier-McKinstry, S.; Mantese, J. V.;Whatmore, Roger W.; Alpay, S. P. Ferroelectric lead zirconate titanate [Pb(Zr x Ti 1-x O) 3 , (PZT x:1-x)] has received considerable interest for applications related to uncooled infrared devices due to its large pyroelectric figures of merit near room temperature, and the fact that such devices are inherently ac coupled, allowing for simplified image post processing. For ferroelectric films made by industry-standard deposition techniques, stresses develop in the PZT layer upon cooling from the processing/growth temperature due to thermal mismatch between the film and the substrate. In this study, we use a non-linear thermodynamic model to investigate the pyroelectric properties of polycrystalline PZT thin films for five different compositions (PZT 40:60, PZT 30:70, PZT 20:80, PZT 10:90, PZT 0:100) on silicon as a function of processing temperature (25-800 C). It is shown that the in-plane thermal stresses in PZT thin films alter the out-of-plane polarization and the ferroelectric phase transformation temperature, with profound effect on the pyroelectric properties. PZT 30:70 is found to have the largest pyroelectric coefficient (0.042 lC cm À2 C Publication date 2013 Original citation À1, comparable to bulk values) at a growth temperature of 550 C; typical to what is currently used for many deposition processes. Our results indicate that it is possible to optimize the pyroelectric response of PZT thin films by adjusting the Ti composition and the processing temperature, thereby, enabling the tailoring of material properties for optimization relative to a specific deposition process. V C 2013 AIP Publishing LLC. [http://dx

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“…Both effects give rise to macroscopic electromechanical coupling and polarization. 5,6 Ferroelectric domain wall motion is predominantly an irreversible effect wherein the displacement does not return to the original position upon release of the electric field.…”

Section: Introductionmentioning

confidence: 99%

In situ characterization of polycrystalline ferroelectrics using x-ray and neutron diffraction

2014

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Deposition Of PZT Thin Films With (001), (110), and (111) Crystallographic Orientations And Their transverse Piezoelectric Characteristics

Cited by 34 publications

References 0 publications

Modulation of magnetic coercivity in Ni thin films by reversible control of strain

Modulation of magnetic coercivity in Ni thin films by reversible control of strain

Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses

In situ characterization of polycrystalline ferroelectrics using x-ray and neutron diffraction

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