Deposition of MoSe<sub>2</sub> flakes using cyclic selenides

Charvot, Jaroslav; Zazpe, Raúl; Krumpolec, Richard; Rodríguez‐Pereira, Jhonatan; Pavliňák, David; Pokorný, Daniel; Klikar, Milan; Jelínková, Veronika; Macák, Jan M.; Bureš, Filip

doi:10.1039/d0ra10239c

Cited by 4 publications

(4 citation statements)

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“…Hence, further synthetic attempts were focused on the development of a Se precursor with improved stability and persistent reactivity. Very recently, cyclic silylselenides 6 – 8 were prepared and tested as ALD precursors . These include four-, five-, and six-membered cycles, whose preparation is shown in Scheme .…”

Section: Introductionmentioning

confidence: 94%

Organoselenium Precursors for Atomic Layer Deposition

et al. 2021

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Organoselenium compounds with perspective application as Se precursors for atomic layer deposition have been reviewed. The originally limited portfolio of available Se precursors such as H 2 Se and diethyl(di)selenide has recently been extended by bis(trialkylsilyl)selenides, bis(trialkylstannyl)selenides, cyclic selenides, and tetrakis( N , N -dimethyldithiocarbamate)selenium. Their structural aspects, property tuning, fundamental properties, and preparations are discussed. It turned out that symmetric four- and six-membered cyclic silyl selenides possess well-balanced reactivity/stability, facile and cost-effective synthesis starting from inexpensive and readily available chlorosilanes, improved resistance toward air and moisture, easy handling, sufficient volatility, thermal resistance, and complete gas-to-solid phase exchange reaction with MoCl 5 , affording MoSe 2 nanostructures. These properties make them the most promising Se precursor developed for atomic layer deposition so far.

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Section: Introductionmentioning

confidence: 94%

Organoselenium Precursors for Atomic Layer Deposition

et al. 2021

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“…This is attributed to its narrow bandgap (1.33–1.72 eV), high resistance to photocorrosion, and the electrochemically active unsaturated selenium edge. − Nevertheless, the availability of volatile organoselenium compounds suitable for ALD has been limited. To address this, Charvot et al expanded the portfolio by scheming and synthesizing a range of tetra-, penta-, and hexameric cyclic silicaselenides. The properties of these compounds are influenced by the cyclic silicaselenide size and the amount of flush bonding Se atoms, together with alternating alkyl chains on the periphery.…”

Section: The Ald Growth Strategy and Processes For The Synthesis Of Tmdsmentioning

confidence: 99%

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Li,

Zhao,

et al. 2024

Crystal Growth & Design

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transition metal sulfides (TMDs) semiconductors, represented by MoS 2 , are regarded as promising candidates to advance Moore's law in the postsilicon semiconductor era, as they possess the advantages of high carrier mobility, high switching ratios, tunable bandgap, and atomic-level thickness, as well as combining with good mechanical properties. The exploration of high-quality large-area 2D materials is crucial for investigating new physical phenomena and further extending their applications in microelectronics and optoelectronics. Among the techniques for producing high-quality 2D materials, atomic layer deposition (ALD) stands out as a self-limiting surface chemical reaction-based method. It offers more advantages in terms of step coverage, wafer size uniformity, and controllable stoichiometric ratio, which is expected to overcome the bottleneck in the utilization of 2D materials in optoelectronic integrated devices and future large-scale applications. In this paper, we provide an overview of the structure and properties of TMDs, and then focus on the latest progress in the ALD-based preparation of TMD thin films. Key factors influencing the film quality are discussed, and we conclude by discussing the potential future development trends in this field.

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“…The process and materials parameters obtained with 4 and 5 will be compared next. Finally, we perform a scale-up using 5 , which yields superior performance in terms of both process and materials quality. , …”

Section: Introductionmentioning

confidence: 99%

“…Finally, we perform a scale-up using 5, which yields superior performance in terms of both process and materials quality. 16,17 ■ EXPERIMENTAL SECTION Substrate Preparation. 30 nm thick amorphous TiO 2 thin films (TiO 2 target, 99.99%) were deposited on previously UV−ozone-cleaned (30 min) silicon wafers with native oxide (Si/SiO 2 , Silicon Materials Inc.) by radio frequency (RF) magnetron sputtering (CRC 622 model, Torr International, Inc.) at a working pressure of 0.3 Pa with a power density of 2.5 W cm −2 .…”

Section: ■ Introductionmentioning

confidence: 99%

Sb₂Se₃ Thin-Film Growth by Solution Atomic Layer Deposition

et al. 2022

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We establish solution atomic layer deposition (sALD) for the controlled growth of pure Sb 2 Se 3 thin films under mild conditions, namely, room temperature and atmospheric pressure. Upscaling this process yields Sb 2 Se 3 thin films with high homogeneity over large-area (4″) substrates. Annealing of the initially amorphous material leads to highly crystalline and smooth Sb 2 Se 3 thin films. Removing the constraints of thermal stability and sufficient volatility in sALD compared to traditional gas-phase ALD opens up a broad choice of precursors and allows us to examine a wide range of Se 2− precursors, of which some exhibit facile synthetic routes and allow us to tune their reactivity for optimal experimental ease of use. Moreover, we demonstrate that the solvent used in sALD represents an additional, attractive tool to influence and tailor the reactivity at the liquid−solid interface between the precursors and the surface.

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Deposition of MoSe₂ flakes using cyclic selenides

Abstract: Diselenadisiletanes possess easy preparation, tailored stability, reactivity, volatility and fast exchange ALD reaction to afford MoSe2 flakes of high quality.

Cited by 4 publications

References 25 publications

Organoselenium Precursors for Atomic Layer Deposition

Organoselenium Precursors for Atomic Layer Deposition

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Sb₂Se₃ Thin-Film Growth by Solution Atomic Layer Deposition

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Deposition of MoSe2 flakes using cyclic selenides

Abstract: Diselenadisiletanes possess easy preparation, tailored stability, reactivity, volatility and fast exchange ALD reaction to afford MoSe2 flakes of high quality.

Cited by 4 publications

References 25 publications

Organoselenium Precursors for Atomic Layer Deposition

Organoselenium Precursors for Atomic Layer Deposition

Atomic Layer Deposition of Transition-Metal Dichalcogenides

Sb2Se3 Thin-Film Growth by Solution Atomic Layer Deposition

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Deposition of MoSe₂ flakes using cyclic selenides

Sb₂Se₃ Thin-Film Growth by Solution Atomic Layer Deposition