Sb₂Se₃ Thin-Film Growth by Solution Atomic Layer Deposition

Abstract

We establish solution atomic layer deposition (sALD) for the controlled growth of pure Sb 2 Se 3 thin films under mild conditions, namely, room temperature and atmospheric pressure. Upscaling this process yields Sb 2 Se 3 thin films with high homogeneity over large-area (4″) substrates. Annealing of the initially amorphous material leads to highly crystalline and smooth Sb 2 Se 3 thin films. Removing the constraints of thermal stability and sufficient volatility in sALD compared to traditional gas-phase ALD opens up a broad choice of precursors and allows us to examine a wide range of Se 2− precursors, of which some exhibit facile synthetic routes and allow us to tune their reactivity for optimal experimental ease of use. Moreover, we demonstrate that the solvent used in sALD represents an additional, attractive tool to influence and tailor the reactivity at the liquid−solid interface between the precursors and the surface.

Interfacial Distortion of Sb2Te3–Sb2Se3 Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties

“…Before the structures were synthesized, the growth behaviors of single-phase Sb 2 Te 3 and Sb 2 Se 3 films were investigated. For Sb 2 Te 3 films, a combination of SbCl 3 and (Et 3 Si) 2 Te precursors was employed, whereas for Sb 2 Se 3 films, SbCl 3 and Se­(SnMe 3 ) 2 precursors were utilized. , The Sb 2 Te 3 and Sb 2 Se 3 thin films were grown at 80 and 110 °C without any vacuum break, respectively (see more details in the Experimental Section). The structural characterizations of Sb 2 Te 3 –Sb 2 Se 3 are shown in Figure and Figure S1 in the Supporting Information.…”

The surface chemistry of the atomic layer deposition of metal thin films

“…The promotional effect of the ionic liquid in this case was ascribed to a lowering in the activation barrier for a C-C bond-scission step in a coordinated acac ligand to produce and release acetone and acetic acid. It should be mentioned that in a few instances ALD processes have been carried out in solution, as in the reported case of the deposition of Sb 2 Se 3 thin films using tris(dimethylamido)antimony(III) (Sb(NMe 2 ) 3 ) and H 2 S in an n-hexane solution [105]. However, these are exemptions, and solution-based ALD is usually not compatible with other manufacturing steps in microelectronics processes anyway.…”