Deposition of low-resistivity ITO on plastic substrates by DC arc-discharge ion plating

Material properties and growth control of undoped and Sn-doped In2O3 thin films prepared by using ion beam technologies

“…However, Kamei et al showed that neither the large-angle grain boundary nor the crystallographic orientation were the dominant electron-scattering factors in ITO films by depositing heteroepitaxial and randomly oriented ITO films on YSZ and on glass substrate, respectively [20]. In our studies of ITO films on glass substrates [28,29], we have used ITO itself as a seed layer to control the microstructure of the ITO films deposited by an ion beam sputter deposition without sacrificing the electrical conductivity.…”

“…New deposition techniques and/ or post-treatments [32 -34] have been introduced to overcome the low thermal resistance and various surface treatments have been tried to modify the surface of the plastic substrates [35,36]. The oxide films deposited on polymer substrates are available in various industrial fields such as anti-reflection and anti-static coatings [37], barrier coatings [38], transparent electrode for flexible displays [39], touch panel, etc.…”

OLED Displays on Plastic

“…The lower resistivity will lead to greater resistive losses than in a glass PMOLED, but it should be suitable for small PM displays as well as most AM applications. There are a number of processes being explored to provide lower resistivity; they include postdeposition laser annealing (Chung et al 2002), pulsed laser deposition (Izumi et al 2002), reactive evaporation (Ma et al 1997), DC arc discharge ion plating (Niino et al 2002), and sol-gel synthesis (Asakuma et al 2003).…”

Enhancement of physical properties of indium tin oxide deposited by super density arc plasma ion plating by O2 plasma treatment

“…The super density arc plasma ion plating (SDAP-IP) technique has been investigated as an alternative method [2]. ITO films can be made at a high deposition rate with a small target because the density of ions, electrons, and activated neutral particles in SDAP-IP is much higher than that in DC or RF glow discharge [3].…”