Deposition of low-resistivity gallium-doped zinc oxide films by low-temperature radio-frequency magnetron sputtering

Tseng, Jiun-Yi; Chen, Yuan-Tsung; Yang, Minghao; Chen, Ming-Fong; Li, Pin-Chou; Yu, Wang-Chieh; Hsu, Yung−Fu; Wang, Sea-Fue

doi:10.1016/j.tsf.2009.02.061

Cited by 41 publications

(15 citation statements)

References 30 publications

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“…In this regard, crystalline gallium zinc oxide (GZO) nanostructures have been obtained by thermal evaporation [18], spray pyrolysis [19], r.f. magnetron sputtering [20], pulsed laser deposition [21], molecular-beam epitaxy [22], metaleorganic chemical vapor deposition [23], arc-discharge [24], hydrothermal process [25], solegel technique [26], among others. Nevertheless, extensive descriptions concerning the effect of optoelectronic doping on the morphology, structural and vibrational properties are scarce [27].…”

Section: Introductionmentioning

confidence: 99%

Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

Pineda-Hernández

Escobedo-Morales

Pal

et al. 2012

Materials Chemistry and Physics

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Section: Introductionmentioning

confidence: 99%

Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

Pineda-Hernández

Escobedo-Morales

Pal

et al. 2012

Materials Chemistry and Physics

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“…Also, in the lower working pressure, the mean free paths of the particles in plasma are longer than those at higher working pressures because fewer collisions occur within the plasma. 15) Figures 5(a) and 5(b) show the deposition rate, resistivity, carrier concentration, and Hall mobility of the ATO films deposited on a PES flexible substrate as a function of the different RF powers with a working pressure of 0.67 Pa. As shown in Fig. 5(a), as the RF power increased from 50 to 150 W, the deposition rate increased from 7.14 to 21.2 nm.…”

Section: Resultsmentioning

confidence: 95%

Structural, Electrical, and Optical Properties of SnO₂:Sb Films Prepared on Flexible Substrate at Room Temperature

Lee

Boo

Hong

2011

Jpn. J. Appl. Phys.

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In this study, antimony (6 wt %)-doped tin oxide (ATO) films were prepared on a poly(ether sulphone) (PES) flexible substrate by radio frequency (RF) magnetron sputtering at room temperature, with varying deposition parameters such as RF power and working pressure. The RF power was varied from 50 to 150 W in steps of 25 W. The working pressure was varied from 0.67 to 1.2 Pa in steps of 0.27 Pa at room temperature. The thickness of the deposited ATO films was about 200 nm. The (110), (101), (200), and (211) diffraction peaks were observed for the ATO films deposited with two different conditions. All the samples were found to be crystalline with a cassiterite tetragonal (rutile type) structure that has a preferred orientation in the (101) direction, which is structurally stable and exists mainly in nature. The ATO film deposited at a RF power of 125 W with a working pressure of 0.67 Pa showed the lowest resistivity of 6:9 Â 10 À3 cm, and the optical transmittance was 80.1% in the visible wavelength range from 400 to 800 nm. #

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“…power, substrate heating [35e37], target-to substrate distance [38], process pressure [39] etc. have great influence on the film characteristics.…”

Section: Introductionmentioning

confidence: 99%

Effect of r.f. power variation on gallium doped zinc oxide thin films

Duygulu

2015

Vacuum

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Deposition of low-resistivity gallium-doped zinc oxide films by low-temperature radio-frequency magnetron sputtering

Cited by 41 publications

References 30 publications

Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

Structural, Electrical, and Optical Properties of SnO₂:Sb Films Prepared on Flexible Substrate at Room Temperature

Effect of r.f. power variation on gallium doped zinc oxide thin films

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Deposition of low-resistivity gallium-doped zinc oxide films by low-temperature radio-frequency magnetron sputtering

Cited by 41 publications

References 30 publications

Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

Structural, Electrical, and Optical Properties of SnO2:Sb Films Prepared on Flexible Substrate at Room Temperature

Effect of r.f. power variation on gallium doped zinc oxide thin films

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Structural, Electrical, and Optical Properties of SnO₂:Sb Films Prepared on Flexible Substrate at Room Temperature