Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

Pineda-Hernández, G.; Escobedo-Morales, A.; Pal, U.; Anota, E. Chigo

doi:10.1016/j.matchemphys.2012.05.062

Cited by 27 publications

(28 citation statements)

References 54 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, they only demonstrated to control wire morphology, not to alter the growth direction due to the low-temperature growth process, which is mainly governed by kinetics rather than thermodynamics. Thus, it is important to note that our finding and growth-control mechanism are distinct from results reported previously in solution-based approaches under complex ions or Ga ions assistance 6,[17][18][19] . The ability to control the crystallographic orientation and morphology of anisotropic ZnO wires enables us to achieve the designed physical properties because the presence of spontaneous and piezoelectric polarization strongly influences the behaviors of excitons and electron-hole overlap associated with optical characteristics 1,2 .…”

contrasting

confidence: 65%

“…For example, several groups demonstrated control over the growth rate of each crystallographic plane by adding charged complex ions or metal ions, affecting surface properties and nucleation, through solution-based growth [6][7][17][18][19] . They only achieved to obtain wires with controlled aspect ratios and morphology, but the possibility for controlled growth in polar and non-polar orientation was not demonstrated.…”

mentioning

confidence: 99%

“…Similar to Ga atoms achieved for the growth of ZnO wires along nonpolar directions, we have also achieved similar control over the growth orientation of ZnO wires by modulating surface energy with Al elements due to the relatively large surface energy lowering (see Supplementary Figure S9b). It has been reported that additional charged complex ions or Ga ions in the growth solution strongly affect the morphology, size, and aspect ratios of ZnO wires 6,[17][18][19] . However, they only demonstrated to control wire morphology, not to alter the growth direction due to the low-temperature growth process, which is mainly governed by kinetics rather than thermodynamics.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Recent Progress in Synthesis of Plate-like ZnO and its Applications: A Review

Jang¹

2017

J. Korean Ceram. Soc

View full text Add to dashboard Cite

ZnO is a wide band-gap semiconductor with piezoelectric properties suitable for opto-electronics, sensors, and as an electrode material. Controlling the shape and crystallography of any semiconducting nanomaterial is a key step towards extending their use in applications. Whilst anisotropic ZnO wires have been routinely fabricated, precise control over the specific surface facets and tailoring of polar and non-polar growth directions still requires significant refinement. Manipulating the surface energy of crystal facets is a generic approach for the rational design and growth of one-dimensional (1D) building blocks [1][2][3][4] . Although the surface energy is one basic factor for governing crystal nucleation and growth of anisotropic 1D structures, structural control based on surface energy minimization has not been yet demonstrated [5][6][7][8][9] . Here, we report an electronic configuration scheme to rationally modulate surface electrostatic energies for crystallographic-selective growth of ZnO wires. The facets and orientations of ZnO wires are transformed between hexagonal and rectangular/diamond cross-sections with polar and non-polar growth directions, exhibiting different optical and piezoelectrical properties. Our novel synthetic route for ZnO wire fabrication provides new opportunities for future opto-electronics, piezoelectronics, and electronics, with new topological properties.I norganic compound semiconductors with the inherent structural anisotropy continue to be of considerable interest for both fundamental science and potential technology applications due to their diverse functionalities and unique features combined with the dynamic electro-mechanical coupling and the static polarization [10][11][12][13][14] . In particular, the strong electrical polarization of wurtzite semiconductors such as ZnO and GaN, arising from non-central symmetry and crystallographic polarity, has a profound effect on carrier concentration, energy band structure, photon emission energy, and excitonic behavior [1][2][3][4] . Thus, the nature of the terminating surface on wurtzite crystal, which is intimately associated with the growth direction and the bonding state, can play a crucial role in its electrical, optical, and photophysical features. Furthermore, such anisotropic phenomena are particularly striking and relevant for one-dimensional (1D) structure due to its geometric crystal structure with the highly uniaxial anisotropy as well as the highly confined strain and polarization field, compared to bulk and film structures. Hence, tailoring facets and crystal shapes of 1D wurtzite materials through control of crystal preferred growth orientation is an effective way for achieving not only designed physical properties, but also the ability to manipulate the polarization between parallel to and perpendicular to their length. This in turn allows for creating a new concept of topological architecture and unique function pertinent to potential device applications. However, because of chemically active polar surfaces wi...

show abstract

contrasting

confidence: 65%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Recent Progress in Synthesis of Plate-like ZnO and its Applications: A Review

Jang¹

2017

J. Korean Ceram. Soc

View full text Add to dashboard Cite

show abstract

“…The intensity of the E 2 (low) and E 2 (high) modes shows clearly a dependency on the Fe doping concentration in ZnO. As a result of differences in the atomic weight of the Zn and Fe atoms, a larger modification of the intensity by doping is obtained for the peak related to the oxygen sub-lattice (E 2 (high)) due to incorporations of the substitutional Fe atoms (Fe Zn ) [56]. All calculated parameters from micro-Raman spectra are generalized in Table S2.…”

Section: Micro-raman Investigations Of the Zno And Zno:fe Nanostructumentioning

confidence: 99%

Multifunctional device based on ZnO:Fe nanostructured films with enhanced UV and ultra-fast ethanol vapour sensing

Postica

Hölken

Schneider

et al. 2016

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

“…Zinc oxide (ZnO) has recently attracted attention as a TCO because it exhibits a wide band gap (3.37 eV), and a high exciton binding energy (60 meV) at room temperature (RT) [4], it is easy to dope using various elements, it is thermally stable when doped with group III elements [5], it exhibits better resistance to damage during H 2 plasma processing than ITO does [6,7]. Thus, group III elements such as B [8,9], Al [10,11], Ga [12,13], and In [14,15] can be readily used as cation dopants to improve the optical properties of ZnO thin films. Furthermore, doping can be used to effectively tune the width of the band gap of ZnO, which will in turn affect the optical properties of ZnO [16][17][18].…”

Section: Introductionmentioning

confidence: 99%