Deposition of Dielectric Thin Films for a-Si:H TFT

Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration

“…[50][51][52][53] Due to its high k value, a physically relative thick film can be used to avoid the shortage between the top (source/drain) and bottom (gate) metals as well as to reduce the gate current leakage. However, in order to achieve the best device characteristics, such as high field effect mobility, low interface density of states, and the low threshold voltage, the high-k material is used as the bulk gate dielectric film with a separate SiN x interface layer in contact with a-Si:H. 54,55) The interface SiN x layer usually contains nonstoichiometric composition, smooth interface, low stress, low defect density, etc. 30,56,57) For sub 65 nm MOSFETs, a high-k material is required to replace the sub 1.2 nm thick thermal SiO 2 gate dielectric to reduce the leakage current, to eliminate the diffusion of dopants to the channel region, and to improve device reliability.…”

(Invited) Thin Film Transistors as Driving Devices for Attached Devices

“…Due to the high current requirement, the OLED is impossible to prepare with the one a-Si:H TFT per pixel design. It requires the high mobility TFT [2]. The amorphous indium gallium zinc oxide (a-IGZO) TFT, which has a field effect mobility about one order of magnitude higher than that of the a-Si:H TFT, has been used in AMLCDs, AMOLEDs, and electronic papers [3].…”

“…Poly-Si TFTs with very high mobilities, e.g., > 200 cm 2 /Vs, have also been demonstrated feasible for these applications and even the integrated circuits (ICs) for many years. In addition to displays, TFTs have been used as the driving devices in optical, chemical, or biological sensing, detection, or imaging, as shown in Table 1 [2][3][4][5][6][7][8][9][10]. Depending on the specific application, each attached device has its own requirements on the voltage, current, power, etc.…”