2017
DOI: 10.1016/j.diamond.2017.01.007
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Deposition of diamond-like carbon thin films by the high power impulse magnetron sputtering method

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Cited by 15 publications
(10 citation statements)
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“…The hardness of the prepared DLC films was 37 GPa when the pulse width was 7 μs and the applied voltage was −1200 V. It was said that the highly ionized carbon species in HiPIMS was responsible for the high hardness of the DLC because of a high content of sp 3 fraction in the films. Wiatrowski et al [93] claimed that ions bombarding and depositing energy on the substrate surface during the growth of DLC films improved the stability of the sp 3 bonds and the properties of the deposited DLC film during the HiPIMS process. The prepared DLC films were characterized by a high refractive index (n=2.45 at 400 nm) and a high sp 3 fraction content (70%-80%, calculated from the acquired Raman scattering spectra).…”
Section: Hard Coatingsmentioning
confidence: 99%
“…The hardness of the prepared DLC films was 37 GPa when the pulse width was 7 μs and the applied voltage was −1200 V. It was said that the highly ionized carbon species in HiPIMS was responsible for the high hardness of the DLC because of a high content of sp 3 fraction in the films. Wiatrowski et al [93] claimed that ions bombarding and depositing energy on the substrate surface during the growth of DLC films improved the stability of the sp 3 bonds and the properties of the deposited DLC film during the HiPIMS process. The prepared DLC films were characterized by a high refractive index (n=2.45 at 400 nm) and a high sp 3 fraction content (70%-80%, calculated from the acquired Raman scattering spectra).…”
Section: Hard Coatingsmentioning
confidence: 99%
“…It is not possible to increase the anode-cathode voltage (that influences the plasma particles energy) without a significant increase in the discharge current and therefore in the discharge power [10]. The high target power density causes problems with the target cooling and stability of sputtering as the arcing is likely to take place during standard, direct current processes [11].…”
Section: Introductionmentioning
confidence: 99%
“…Consequently, the effectiveness of gas ionization by electrons was temporarily reduced as well. This phenomenon can eliminate formation of metallic micro-particle inclusions in deposited film [ 45 ].…”
Section: Resultsmentioning
confidence: 99%
“…The films were deposited within 300 pulses, with a total time of 900 s and voltage of 900 V. The number of the pulses was controlled by AVR Arduino Uno microcontroller electronics. The HiPIMS setup was described in detail in our previous work [ 45 ].…”
Section: Methodsmentioning
confidence: 99%