Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source

Rodil, S.E.; Morrison, N. A.; Milne, W. I.; Robertson, John; Stolojan, Vlad; Jayawardane, D. N.

doi:10.1016/s0925-9635(99)00345-3

Cited by 42 publications

(13 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Principle and arrangement of ECWR-HiPIMS ECWR discharge has been known for forty years 43 and is being used for plasma enhanced chemical applications. [46][47][48] The ECWR effect results from the interaction of electromagnetic wave and plasma in a volume with a superimposed magnetic field. An ECWR arrangement often used is shown in Fig.…”

Section: Description Of Experimentsmentioning

confidence: 99%

Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

Straňák

Herrendorf

Drache

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inExperimental investigations of silicon tetrafluoride decomposition in ECR discharge plasma Rev. Sci. Instrum. 82, 063503 (2011); 10.1063/1.3599618 Design and characterization of 2.45 GHz electron cyclotron resonance plasma source with magnetron magnetic field configuration for high flux of hyperthermal neutral beam Rev. Sci. Instrum. 81, 083301 (2010);This paper reports on an investigation of the hybrid pulsed sputtering source based on the combination of electron cyclotron wave resonance (ECWR) inductively coupled plasma and high power impulse magnetron sputtering (HiPIMS) of a Ti target. The plasma source, operated in an Ar atmosphere at a very low pressure of 0.03 Pa, provides plasma where the major fraction of sputtered particles is ionized. It was found that ECWR assistance increases the electron temperature during the HiPIMS pulse. The discharge current and electron density can achieve their stable maximum 10 ls after the onset of the HiPIMS pulse. Further, a high concentration of double charged Ti þþ with energies of up to 160 eV was detected. All of these facts were verified experimentally by time-resolved emission spectroscopy, retarding field analyzer measurement, Langmuir probe, and energy-resolved mass spectrometry. V C 2012 American Institute of Physics.

show abstract

Section: Description Of Experimentsmentioning

confidence: 99%

Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

Straňák

Herrendorf

Drache

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Carbon nitride thin films can be deposited by a variety of deposition techniques, namely sputtering, 15 plasma enhanced chemical vapor deposition, 16,17 filtered cathodic vacuum arc ͑FVCA͒, 18,19 electron cyclotron wave resonance ͑ECWR͒, 20 mass selected ion beam deposition, 21 and integrated distributed electron cyclotron resonance. 22 Among the deposition techniques, pulsed laser deposition ͑PLD͒ ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

Electronic state modification in laser deposited amorphous carbon films by the inclusion of nitrogen

Miyajima

Adamopoulos

Henley

et al. 2008

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

In this study, we investigate the effect of the inclusion of nitrogen in amorphous carbon thin films deposited by pulsed laser deposition, which results in stress induced modifications to the band structure and the concomitant changes to the electronic transport properties. The microstructural changes due to nitrogen incorporation were examined using electron energy-loss spectroscopy and Raman scattering. The band structure was investigated using spectroscopic ellipsometry data in the range of 1.5-5 eV, which was fitted to the Tauc Lorentz model parametrization and optical transmittance measurements. The dielectric constant evaluated using optical techniques was compared to that obtained with electrical measurements, assuming a Poole-Frenkel type conduction process based on the best fits to data. The electrical conduction mechanism is discussed for both low and high electric fields, in the context of the shape of the band density of states. By relating a wide range of measurement techniques, a detailed relationship between the microstructure, and the optical and the electrical structures of a-CN x films is obtained. From these measurements, it was found that, primarily, the change in density of the film, with increasing nitrogen pressure, affects the band structure of the amorphous carbon nitride. This is due to the fact that the density affects the stress in the film, which also impacts the localized states in the band gap. These results are supported by density of states measurements using scanning tunneling spectroscopy.

show abstract

“…The Cambridge group has characterized silicon anodically oxidized using a wave resonance plasma (WARP) source by RBS (Uchikoga et al 1999), and also characterized WARP deposited a-C : N : H films by He ERD/RBS (Rodil et al 2000). The Sussex group has profiled metal nanoparticles formed in glass by high dose implantation (Stepanov et al 1999(Stepanov et al , 2001a.…”

mentioning

confidence: 99%

Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool

Jeynes

Barradas

Marriott

et al. 2003

J. Phys. D: Appl. Phys.

173

View full text Add to dashboard Cite

Rutherford backscattering spectrometry (RBS) and related techniques have long been used to determine the elemental depth profiles in films a few nanometres to a few microns thick. However, although obtaining spectra is very easy, solving the inverse problem of extracting the depth profiles from the spectra is not possible analytically except for special cases. It is because these special cases include important classes of samples, and because skilled analysts are adept at extracting useful qualitative information from the data, that ion beam analysis is still an important technique.We have recently solved this inverse problem using the simulated annealing algorithm. We have implemented the solution in the 'IBA DataFurnace' code, which has been developed into a very versatile and general new software tool that analysts can now use to rapidly extract quantitative accurate depth profiles from real samples on an industrial scale. We review the features, applicability and validation of this new code together with other approaches to handling IBA (ion beam analysis) data, with particular attention being given to determining both the absolute accuracy of the depth profiles and statistically accurate error estimates.We include examples of analyses using RBS, non-Rutherford elastic scattering, elastic recoil detection and non-resonant nuclear reactions. High depth resolution and the use of multiple techniques simultaneously are both discussed. There is usually systematic ambiguity in IBA data and Butler's example of ambiguity (1990 Nucl. Instrum. Methods B 45 160-5) is reanalysed. Analyses are shown: of evaporated, sputtered, oxidized, ion implanted, ion beam mixed and annealed materials; of semiconductors, optical and magnetic multilayers, superconductors, tribological films and metals; and of oxides on Si, mixed metal silicides, boron nitride, GaN, SiC, mixed metal oxides, YBCO and polymers. OverviewWe will review our recent software developments in thin film depth profiling with ion beam analysis (IBA, see the 6 Centre de Física Nuclear da Universidade de Lisboa, Avenida Prog. Gama Pinto 2, 1699 Lisboa Codex, Portugal Glossary in section 2 for an explanation of the acronyms) in the context of the work of the community; discussing the scientific implications of these developments. We hope to show that these developments improve the usability of IBA to such an extent as to effectively establish a new depth profiling tool.We start (section 2) with a simplified overview of IBA since we believe that our new software tool (the IBA

show abstract

Deposition of carbon nitride films using an electron cyclotron wave resonance plasma source

Cited by 42 publications

References 31 publications

Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

Electronic state modification in laser deposited amorphous carbon films by the inclusion of nitrogen

Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool

Contact Info

Product

Resources

About