Deposition of aluminum nitride thin film on Si(111) by KrF excimer laser and its characterizations

Role of charge particles irradiation on the deposition of AlN films using plasma focus device

“…Deposition of AlN films with various structural and morphological characteristics can be achieved using various deposition techniques. Temperature higher than 1000 1C is required to deposit high quality AlN films using CVD and MBE techniques [8,9] Plasma-enhanced CVD and reactive magnetron sputtering techniques required 600 1C substrate temperature for the deposition of good quality AlN films [10][11][12][13]. This high temperature causes the degradation and thermal damage of the AlN films during deposition.…”

A Visible Light Blinded Photo-detector With an ITO/ZST/Si MIS Device Structure

“…We present the fabrication the fabrication of a MIS photo detector by using ITO as the metal contact and Zr 0.8 Sn 0.2 TiO 4 (ZST) as its dielectric layer on a p-type Si substrate to improve its photo sensitivity and to manipulate the optic property of the dielectric layer to achieve the function of a white light blind IR detector. Figure 1- Pulse laser deposition (PLD) has been demonstrated for the deposition of various dielectric thin films with almost the same composition as target elements without damaging to the processed surface [4][5][6]. The high energy photon of excimer laser is able to achieve ablation of the target within a short period of time and ejection of the micro-species of the target elements.…”