Deposition by LP-MOVPE in the Ga-In-As-P system on differently oriented substrates

InAs epitaxial lateral overgrowth of W masks

“…In this study, we, hence, optimize the V/III-ratio to reduce the parasitic diffusion of materials from the {1 1 1}A-like facets towards the slightly faster growing (0 0 1)-plane. For InP, the growth rates have been found to be comparable on the (0 0 1)-, {1 1 0}-, and {1 1 1}-planes for growth at 660 1C and a pressure of 20 hPa [11]. Overgrowth studies of InP on W masks have shown high lateral growth rates at both the {1 1 1}A-like and {1 1 1}B-like planes [5] and W-gratings oriented in either 301 or 601 have been embedded in InP without the formation of voids [5].…”

“…However, the study also showed a tendency to form overhanging facets above wider metal structures oriented at 301 off from the ½1 1 0-direction and hence a grating direction of 601 is preferably used for InP. GaAs has a low, kinetic-limited growth rate of the {1 1 1}B-planes [11]. Consequently, {1 1 1}A-like planes are preferentially used for overgrowth and the gratings should be placed in the 301-direction.…”

Au-catalyst-free epitaxy of InAs nanowires

“…Another possibility is that in the kinetically limited regime the NWs are grown, orientation effects begin to play a larger role [15]. Surface diffusion and the available Ga atom density differences between GaAs(1 0 0) and GaAs (1 1 1)B can lead to observed NW growth rate differences with orientation.…”

Top edge facet development in asymmetric grooves

“…It is therefore not surprising that the deposition of the ternary GaInP alloy, with respect to the process parameters set forth in this study, would also relay a different growth rate relation [19,21] as expressed by:…”

“…supersaturation and temperature -as well as the material system to be deposited. The deposition on non-planar surfaces of different binaries may exhibit a completely different relative growth rate relation as, for example, the homoepitaxy of GaAs [ 19],…”