1986
DOI: 10.1007/bf00553276
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Deposition and microhardness of SiC from the Si2Cl6-C3H8-H2-Ar system

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Cited by 19 publications
(1 citation statement)
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“…The thickness SiC crucible wall has the high-density structure with small quantity of the pores (Fig. 3 d) and the values of Hv and K 1C are very high, and they have a good agreement with the literature data (Hv = 33 -38 GPa, K 1C = 3 -3.5 MPa m 0.5 [6,15,16,17]). In case of RBSiC-matrix, the value of Hv is in 1.4 times less then that for SiC crucible wall, but this correlates with the reference date for Reaction-Bonded SiC ceramic (Hv = 21 -34 GPa, K 1C = 3.6 -4.2 MPa m 0.5 [18,19]).…”
Section: Resultssupporting
confidence: 82%
“…The thickness SiC crucible wall has the high-density structure with small quantity of the pores (Fig. 3 d) and the values of Hv and K 1C are very high, and they have a good agreement with the literature data (Hv = 33 -38 GPa, K 1C = 3 -3.5 MPa m 0.5 [6,15,16,17]). In case of RBSiC-matrix, the value of Hv is in 1.4 times less then that for SiC crucible wall, but this correlates with the reference date for Reaction-Bonded SiC ceramic (Hv = 21 -34 GPa, K 1C = 3.6 -4.2 MPa m 0.5 [18,19]).…”
Section: Resultssupporting
confidence: 82%