Deposition and friction properties of ultra-smooth composite diamond films on Co-cemented tungsten carbide substrates

Shen, Bin; Sun, Fanghong

doi:10.1016/j.diamond.2008.10.053

Cited by 115 publications

(26 citation statements)

References 19 publications

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“…Precede to deposition, the WC-Co inserts were pretreated by a two-step chemical etching method. Firstly, the WC-Co inserts were dipped in Murakami's reagent [10 g K 3 Fe(CN) 6 +10 g KOH + 100 mL H 2 O] in an ultrasonic vessel for 30 min [20]. The second etching step was performed using acid solution [20 mL HCl + 80 mL H 2 O 2 ] to wash surface Co out.…”

Section: Methodsmentioning

confidence: 99%

Deposition and Characterization of Si-Doped Diamond Films Using Tetraethoxysilane onto a WC-Co Substrate

et al. 2016

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Silicon-doped (Si-doped) diamond films were deposited on a Co-cemented tungsten carbide (WC-Co) substrate using the hot filament chemical vapor deposition (HFCVD) method with a mixture of acetone, tetraethoxysilane (TEOS), and hydrogen as the recant source. The as-deposited doped diamond films were characterized with field emission scanning electron microscopy (FE-SEM), Raman spectrum, and X-ray diffraction (XRD). Furthermore, Rockwell C indentation tests were conducted to evaluate the adhesion of the Si-doped diamond films grown on the WC-Co substrate. The results demonstrated that the silicon concentration in the reactant source played an important role in the surface morphology and adhesion of diamond films. The size of diamond grain varied from 3 µm to 500 nm with silicon concentration increasing from 0 to 1.41 atom %. When the silicon concentration rose to 1.81 atom %, the grain size became bigger than that of the lower concentration. The ratio of diamond peak {220}/{111} varied with different silicon concentrations. Raman study features revealed high purity of as-deposited diamond films. The Raman spectra also demonstrated the presence of silicon in the diamond films with Si-Si, Si-C and Si-O bonds. Si-doped diamond films with strong adhesive strength on the WC-Co substrate was beneficial for diamond films applied on cutting tools and wear resistance components.

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Section: Methodsmentioning

confidence: 99%

Deposition and Characterization of Si-Doped Diamond Films Using Tetraethoxysilane onto a WC-Co Substrate

et al. 2016

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“…Hot filament chemical vapor deposition (HFCVD) has been used extensively to fabricate diamond films because of its advantages like geometric simplification, low costs, operational convenience, and potential for scaleup. During the deposition process in HFCVD, the temperature and gas density field in the reactive chamber play a determinate role in the homogeneity and surface quality of deposited diamond films, especially in the case of large-area deposition [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…Diamond films have attracted intensive investigations recently due to its extremely high hardness, wear resistance, together with very low friction coefficient [1][2][3]. Hot filament chemical vapor deposition (HFCVD) has been used extensively to fabricate diamond films because of its advantages like geometric simplification, low costs, operational convenience, and potential for scaleup.…”

Section: Introductionmentioning

confidence: 99%

Simulation of temperature and gas density field distribution in diamond films growth on silicon wafer by hot filament CVD

Zhang

Shen

et al. 2012

Journal of Crystal Growth

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“…Chemical vapor deposition (CVD) diamond has been widely used in cutting inserts [1][2] , drawing dies [3] , liquid pump seals [4] and human implants [5] due to its excellent properties such as low friction coefficient, high hardness and good wear resistance. Among the depositing methods of CVD diamond, the hot-filament chemical vapor deposition (HFCVD) method is cost-effective and much common.…”

Section: Introductionmentioning

confidence: 99%

Friction and cutting properties of hot-filament chemical vapor deposition micro- and fine-grained diamond coated silicon nitride inserts

Yang

Shen

Sun

2010

J. Shanghai Jiaotong Univ. (Sci.)

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The micro-crystalline diamond (MCD) and fine-grained diamond (FGD) films are deposited on commercial silicon nitride inserts by the hot-filament chemical vapor deposition (HFCVD) method. The friction and cutting properties of as-deposited MCD and FGD films coated silicon nitride (Si3N4) inserts are comparatively investigated in this study. The scanning electron microscopy (SEM) and Raman spectroscopy are adopted to study the characterization of the deposited diamond films. The friction tests are conducted on a ball-on-plate type reciprocating friction tester in ambient air using Co-cemented tungsten carbide (WC-Co), Si3N4 and ball-bearing steel (BBS) balls as the mating materials of the diamond films. For sliding against WC-Co, Si3N4 and BBS, the FGD film presents lower friction coefficients than the MCD film. However, after sliding against Si3N4, the FGD film is subject to more severe wear than the MCD film. The cutting performance of as-deposited MCD and FGD coated Si3N4 inserts is examined in dry turning glass fiber reinforced plastics (GFRP) composite materials, comparing with the uncoated Si3N4 insert. The results indicate that the lifetime of Si3N4 inserts can be prolonged by depositing the MCD or FGD film on them and the FGD coated insert shows longer cutting lifetime than the MCD coated one.

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Deposition and friction properties of ultra-smooth composite diamond films on Co-cemented tungsten carbide substrates

Cited by 115 publications

References 19 publications

Deposition and Characterization of Si-Doped Diamond Films Using Tetraethoxysilane onto a WC-Co Substrate

Deposition and Characterization of Si-Doped Diamond Films Using Tetraethoxysilane onto a WC-Co Substrate

Simulation of temperature and gas density field distribution in diamond films growth on silicon wafer by hot filament CVD

Friction and cutting properties of hot-filament chemical vapor deposition micro- and fine-grained diamond coated silicon nitride inserts

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