Deposition and characterization of silicon oxynitride for integrated optical applications

Alayo, Marco I.; Criado, D.; Gonçalves, L. C. D.; Pereyra, I.

doi:10.1016/j.jnoncrysol.2004.02.025

Cited by 31 publications

(24 citation statements)

References 26 publications

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“…After the RIEetching of the rib (illustrated in Figure 3) the removal of the chromium mask done in ceric ammonium nitrate solution. A rough-hewing process followed by polishing of face where light is coupled into the waveguide (face indicated by the arrow in Figure 3) was performed in order to minimize the optical losses due to the insertion of the light into the waveguides [15].…”

Section: Contributedmentioning

confidence: 99%

Optimized‐geometry ARROW waveguides using TiO₂ as anti‐resonant layer

Carvalho

Albertin

Alayo

2010

Phys. Status Solidi (c)

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The simulation, fabrication and characterization of ARROW waveguides using dielectric films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and Sputtering techniques, are presented in this work. Amorphous titanium oxide (TiO2) films were used as first cladding layer and silicon oxynitride (SiOxNy) films, as core layer. Furthermore, homemade routines based in two computational methods were used, for numerical simulations: Transfer Matrix Method (TMM) for the determination of the optimum thickness values of the Fabry‐Perot layers, and the Finite Difference Method (FDM) for 2D design and determination of the maximum width that allows single‐mode operation. The utilization of thermally grown silicon oxide as second anti‐resonant layer, along with improvements in the Reactive Ion Etching conditions for the definition of sidewalls of the optical waveguides were responsible for diminishing optical attenuations. Optimization of the waveguide rib height was done both through FDM simulations and experimentally. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributedmentioning

confidence: 99%

Optimized‐geometry ARROW waveguides using TiO₂ as anti‐resonant layer

Carvalho

Albertin

Alayo

2010

Phys. Status Solidi (c)

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“…The etching process was done with 100 W of RF power and pressure of 66.66 mbar, which was found to be the condition that minimized the roughness on the waveguide's sidewalls. A rough-hewing process followed by polishing of lateral face, where light is coupled into the waveguide was performed in order to minimize the optical losses due to the insertion of the light into the waveguides [17]. For the optical attenuation characterization using the top-view technique [18], a microscope and a CCD camera were positioned above the micro translation stage with the optical device, in order to view the surface of the ARROW structures (Fig.…”

Section: Film Deposition and Characterizationmentioning

confidence: 99%

TiO_xN_y anti‐resonant layer ARROW waveguides

Carvalho¹,

Albertin²,

Alayo³

2010

Phys. Status Solidi (c)

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ARROW waveguides with sputtered‐TiOxNy anti‐resonant layers obtained with different nitrogen concentration in the gaseous mixture were fabricated and characterized. A study of the influence of this parameter on the losses of the waveguides is presented in this work. TiOxNy films have very high refractive indexes, which is a very important characteristic for the first ARROW layer, since this layer behaves like a Fabry‐Perot resonator in anti‐resonance. Optical and compositional properties of the TiOxNy films were also studied and the results are presented. These films were characterized by Rutherford Backscattering Spectroscopy (RBS), FTIRs, optical absorption and ellipsometry. The second anti‐resonant layer and the core of the waveguides were composed of thermally grown SiO2 and PECVD‐SiOxNy, respectively. Optical characterization results show propagation losses as low as 1.18 dB/cm for single‐mode waveguides fabricated with TiOxNy films obtained with 25% of nitrogen in the gaseous mixture. (© WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Recently, the application of AWG and EDG in the sensing area has received substantial interest because of their powerful ability in high-resolution spectral analysis with compact size, and potential for on-chip multi-functional integration [1,2] . High index contrast silicon-on-insulator platform has been chosen for planar waveguide devices working above 1 100 nm [3,4] , which is the absorption edge of silicon, whereas the silicon oxynitride (SiON) waveguide platform for wavelength range below 1 100 nm is favorable because of its variable refractive index (from 1.47 to 2.3) and broad highly transparent wavelength range (210 nm to 2 000 nm) [5] . SiON waveguide based AWG spectrometers have been recently reported, especially for Raman spectroscopy [6] and optical coherence tomography [7,8] .…”

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Echelle dif fraction grating based high-resolution spectrometer-on-chip on SiON waveguide platform

Ma¹,

He²,

Li³

2013

中国光学快报

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An echelle diffraction grating based high-resolution spectrometer-on-chip on silicon oxynitride (SiON) waveguide platform operated at a wavelength range of 850 nm is demonstrated. The chip comprises 120 output waveguides with 0.25-nm wavelength channel spacing and has a size of only 11 × 6 (mm). The experimental results show that the insertion loss is -14 dB, the measured adjacent channel crosstalk is less than -25 dB, the 3 dB channel bandwidth is < 0.1 nm, and the channel non-uniformity is 3 dB for 56 channels with a wavelength ranging from 838 to 852 nm.OCIS codes: 250.3140, 230.3120. doi: 10.3788/COL201311.032501.With the advancement of the wavelength-division multiplexing systems in optical communication in the past two decades, two types of planar waveguide based grating devices have been developed, namely, arrayed waveguide grating (AWG) and echelle diffraction grating (EDG). Recently, the application of AWG and EDG in the sensing area has received substantial interest because of their powerful ability in high-resolution spectral analysis with compact size, and potential for on-chip multi-functional integration [1,2] . High index contrast silicon-on-insulator platform has been chosen for planar waveguide devices working above 1 100 nm [3,4] , which is the absorption edge of silicon, whereas the silicon oxynitride (SiON) waveguide platform for wavelength range below 1 100 nm is favorable because of its variable refractive index (from 1.47 to 2.3) and broad highly transparent wavelength range (210 nm to 2 000 nm) [5] . SiON waveguide based AWG spectrometers have been recently reported, especially for Raman spectroscopy [6] and optical coherence tomography [7,8] . Compared with AWG, EDG is significantly smaller because a folded beam path is used. The current study presents a SiON waveguide based EDG spectrometer-on-chip operating in a wavelength range of 850 nm. Figure 1 shows the schematic of our EDG device. Through the input waveguide, light arrives at the boundary of the slab waveguide, diverges into the slab waveguide, illuminates the echelle grating facets, diffracts back, and then converges to the designated output waveguide according to its wavelength.The channel waveguide (1.25 µm wide and 1 µm high) was chosen as the core waveguide structure for the input and output waveguides. Single-mode operation around 850 nm is achieved with the refractive index of 1.52 for the SiON core layer and 1.46 for the SiO 2 buffer and upper cladding layers. The adjacent output waveguides are separated by a gap of 2.75 µm to minimize crosstalk. This gap corresponds to an output waveguide spacing of 4 µm, which is spread out to 32 µm via curved waveguides. Considering the wavelength channel spacing of 0.25 nm, a linear dispersion coefficient of 16 000 is obtained. The total number of output waveguides is 120, and the EDG was designed with a free spectral range of 28 nm at the 30th diffraction order. The number of grating teeth is 600, which is large enough to cover more than 99% of light energy emitted from the input w...

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Deposition and characterization of silicon oxynitride for integrated optical applications

Cited by 31 publications

References 26 publications

Optimized‐geometry ARROW waveguides using TiO₂ as anti‐resonant layer

Optimized‐geometry ARROW waveguides using TiO₂ as anti‐resonant layer

TiO_xN_y anti‐resonant layer ARROW waveguides

Echelle dif fraction grating based high-resolution spectrometer-on-chip on SiON waveguide platform

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Deposition and characterization of silicon oxynitride for integrated optical applications

Cited by 31 publications

References 26 publications

Optimized‐geometry ARROW waveguides using TiO2 as anti‐resonant layer

Optimized‐geometry ARROW waveguides using TiO2 as anti‐resonant layer

TiOxNy anti‐resonant layer ARROW waveguides

Echelle dif fraction grating based high-resolution spectrometer-on-chip on SiON waveguide platform

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Product

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Optimized‐geometry ARROW waveguides using TiO₂ as anti‐resonant layer

Optimized‐geometry ARROW waveguides using TiO₂ as anti‐resonant layer

TiO_xN_y anti‐resonant layer ARROW waveguides