Deposition and characterization of Ge–Sb–Te layers for applications in optical data storage

Crystallization of Ge:Sb:Te Thin Films for Phase Change Memory Application

“…For example, 30 at. % of the deviation from Ge 2 Sb 2 Te 5 stoichiometric composition increased the crystallization time from 220 to 500 ns (Kyrsta et al, 2001). …”

Advantages of GeTeN material for phase change memory applications

“…Currently a family of phase-change materials, ternary Ge-Sb-Te, especially Ge 2 Sb 2 Te 5 , has widely been adopted as the active layer of PCM because of its outstanding electronic performance [3][4][5]. However, recently, intensive efforts have also been carried out in pursuit of improved phase change characteristics and device performance.…”

Optical properties of GexSb20−xTe80 thin films and their changes by light illumination

“…They possess controllable phase transformation from amorphous to crystal state, which makes them suitable for optical data storage. Amorphous thin films with stoichiometric composition lying on the GeTe-Sb 2 Te 3 pseudobinary line of the Ge-Sb-Te system, have found application as media in optical recording devices [2,3]. Films with non-stoichiometric Ge-Sb-Te compositions are also of practical interest, and their optical and structural properties have recently become subject of intensive studies.…”