Depletion-type thin-film transistors with a ferroelectric insulator

Prins, Mwj Menno; Zinnemers, SE; Cillessen, J. F. M.; Giesbers, J. B.

doi:10.1063/1.118180

Cited by 92 publications

(55 citation statements)

References 10 publications

(6 reference statements)

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“…For unipolar FeFETs, it has been suggested that the programming time is limited by the intrinsic RC-time of the device, where R is equal to the off-state conductance and C is equal to the switched charge divided by the applied voltage. [15] For ambipolar devices that are always in an accumulation mode, one could therefore expect that the switching is inherently faster. However, the occurrence of the depolarized state explains why the observed programming times are nearly equal to the response time of unipolar FeFETs.…”

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confidence: 99%

An Organic Field‐Effect Transistor with Programmable Polarity

et al. 2005

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Organic thin-film field-effect transistors (FETs) have been studied extensively over the last decade, and tremendous progress in device performance has been achieved.[1] OrganicFETs have worked mainly as unipolar p-type transistors, in which positive charges are accumulated in the channel by applying a negative gate voltage, V G . As a result, the state-ofthe-art integrated circuits based on organic FETs are based on unipolar p-type logic.[2] For memory applications, organic transistors with a ferroelectric gate dielectric have recently been investigated. [3][4][5] In this type of device the memory effect arises from the attenuation of the surface charge density in the semiconductor by the remanant polarization of the ferroelectric. The fingerprint of ferroelectric switching, a sharp change of the channel conduction at the coercive field of the ferroelectric, was clearly observed in solution-processed polymer ferroelectric FETs (FeFETs) with a p-type unipolar semiconductor layer. [3] It was shown that the induced surfacecharge density has a high value compared to what can be obtained with conventional Si ++ /SiO 2 transistors, and, as a result, high on/off ratios of 10 4 were achieved.From a performance point of view, however, complementary metal oxide semiconductor (CMOS) logic is crucial. The advantages compared with unipolar logic are low power dissipation, higher operating frequencies, a good noise margin, and robust operation. Therefore, the transport of electrons and holes, the so-called ambipolar charge transport, in FETs is a highly desirable property. Although the first single-channel inorganic ambipolar FETs have been demonstrated more than two decades ago, [6] their organic counterparts have only become a reality in recent years. [7][8][9][10][11][12][13] For organic FETs employing only a single active film, ambipolar charge transport was reported for heterogeneous blends consisting of polymerbased interpenetrating networks as well as narrow bandgap organic semiconductors. [12] We present a new type of organic FET consisting of an ambipolar semiconductor with a fer- COMMUNICATIONS 2692

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confidence: 99%

An Organic Field‐Effect Transistor with Programmable Polarity

et al. 2005

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“…͒ for transparent conducting electrodes, 1 for gas sensing devices, 2 and also as a channel material in thin-film transistors. 3 In the first case the material is degenerately doped, while for the other applications a nondegenerate semiconductor is required.…”

Section: Introductionmentioning

confidence: 99%

Grain-boundary-limited transport in semiconducting SnO2 thin films: Model and experiments

Prins¹,

Grosse-Holz²,

Cillessen³

et al. 1998

Journal of Applied Physics

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We present a model that describes grain-boundary-limited conduction in polycrystalline semiconductors, for thermally assisted ballistic as well as diffusive transport, both for degenerate and nondegenerate doping. In addition to bulk parameters ͑the carrier effective mass and mean free path͒ the model contains grain boundary parameters ͑barrier height and width͒ and a coefficient of current nonuniformity. Temperature-dependent conductivity and Hall measurements on polycrystalline SnO 2 thin films with different Sb concentrations are consistently interpreted.

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“…In addition, TFTs based on oxides have potential advantages over conventional FETs in high voltage and high temperature tolerances. Although there have been several reports on the fabrication of TTFTs using conventional TOSs such as SnO 2 and ZnO, 44 their performances were not satisfactory for practical applications. The large off-current and the unintentional normally-on characteristics originate from the fact that these conventional TOSs contain many carriers in the as-prepared state due to a somewhat large nonstoichiometry in the chemical composition, i.e.…”

Section: High Performance Transparent Tfts;mentioning

confidence: 99%

Function Cultivation of Transparent Oxides Utilizing Built-In Nanostructure

Hosono¹,

Kamiya²,

Hirano³

2006

Bulletin of the Chemical Society of Japan

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This review article describes recent progress in our research on cultivation of functionality in crystalline and amorphous transparent oxides utilizing nanostructures embedded in the material itself. It includes the background of our research and approach. Subjects included are material exploration and device application of transparent oxide semiconductors for transparent electronics, function emergence in nano-porous crystal 12CaO Á 7Al 2 O 3 utilizing active anion species stabilized by sub-nanometer-sized cages, and modified silica glass for vacuum/deep ultraviolet lasers. Our description of each subject include: background and approach, material design concept, fabrication or modification method, properties, and device fabrication. Emphasis is placed on the importance of a variety of built-in nanostructures in transparent oxides for novel function realization and the high potential of transparent oxides as ingredients for an ubiquitous element strategy of material research in this century.

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Depletion-type thin-film transistors with a ferroelectric insulator

Cited by 92 publications

References 10 publications

An Organic Field‐Effect Transistor with Programmable Polarity

An Organic Field‐Effect Transistor with Programmable Polarity

Grain-boundary-limited transport in semiconducting SnO2 thin films: Model and experiments

Function Cultivation of Transparent Oxides Utilizing Built-In Nanostructure

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